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Accelerated memory device trim initialization

A memory and initialization technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of memory density limitation of memory cell size 2D memory array

Pending Publication Date: 2020-07-07
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are technical limits to reducing the size of individual memory cells and thus the memory density of 2D memory arrays

Method used

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  • Accelerated memory device trim initialization
  • Accelerated memory device trim initialization
  • Accelerated memory device trim initialization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0085] Embodiment 1 is a memory device for accelerating memory device pruning initialization, the memory device comprising: an interface for receiving an accelerated pruning command from a controller; and processing circuitry for: enabling the memory device Inhibiting setting trim in response to receiving the accelerated trim command, the trim being set by the controller; and completing the initialization of the memory device after the controller setting the trim .

[0086] In Example 2, the subject matter of Example 1, wherein the accelerated trim command is one of two types of accelerated trim commands, the first type being a partial type and the second type being a complete type.

[0087] In embodiment 3, the subject matter of embodiment 2, wherein the acceleration trim command is of the full type, and wherein to disable setting trim, the processing circuitry is configured to disable setting all trim.

[0088] In Example 4, the subject matter of any one of Examples 2-3, wh...

Embodiment 12

[0096] Embodiment 12 is a method for accelerating trimming initialization of a memory device, the method comprising: initiating initialization of the memory device in a memory device; receiving an accelerated trimming command from a controller in the memory device; by the the memory device inhibits setting trim, the trim being set by the controller, in response to receiving the accelerated trim command; and completing the memory device by the memory device after the controller sets the trim The initialization of .

[0097] In example 13, the subject matter of example 12, wherein the accelerated trim command is one of two types of accelerated trim commands, the first type being a partial type and the second type being a complete type.

[0098] In example 14, the subject matter of example 13, wherein the speed trim command is of type complete, and wherein disabling setting trim includes disabling setting all trim.

[0099] In Example 15, the subject matter of any one of Example...

Embodiment 23

[0107] Embodiment 23 is a machine-readable medium containing instructions for accelerating trim initialization of a memory device, the instructions, when executed by processing circuitry, cause the processing circuitry to perform operations comprising: in the memory device initiating initialization of the memory device; receiving an accelerated trim command in the memory device from a controller; disabling, by the memory device, setting trim in response to receiving the accelerated trim command, the trim being controlled by the controller set; and completing, by the memory device, the initialization of the memory device after the controller sets the trimming.

[0108] In embodiment 24, the subject matter of embodiment 23, wherein the accelerated trim command is one of two types of accelerated trim commands, the first type being a partial type and the second type being a complete type.

[0109] In example 25, the subject matter of example 24, wherein the accelerated trim comman...

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Abstract

Devices and techniques for accelerated memory device trim initialization are described herein. An initialization of a memory device can be started by the memory device. An accelerated trim command canbe received at the memory device from a controller. The memory device can refrain from setting a trim in response to receipt of the accelerated trim command. Here, the trim is expected to be set by the controller. The memory device can then complete the initialization after the trim is set by the controller.

Description

technical field [0001] This application relates to memory devices. Background technique [0002] Memory devices are often provided as internal semiconductor integrated circuits in computers or other electronic systems. There are many different types of memory, including volatile memory and nonvolatile memory. [0003] Volatile memory requires power to maintain its data and includes Random Access Memory (RAM), Dynamic Random Access Memory (DRAM), or Synchronous Dynamic Random Access Memory (SDRAM), among others. [0004] Non-volatile memory can retain stored data when power is not applied, and includes flash memory, read-only memory (ROM), electrically erasable programmable ROM (EEPROM), static RAM (SRAM), erasable programmable ROM (EPROM), resistance variable memory, such as phase change random access memory (PCRAM), resistive random access memory (RRAM) or magnetoresistive random access memory (MRAM), ferroelectric random access memory (FeRAM), etc. Wait. [0005] Flash...

Claims

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Application Information

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IPC IPC(8): G11C16/20
CPCG11C16/20G06F3/0619G06F3/0652G06F3/0659G06F3/0679G11C16/0483G11C29/021G11C29/028G11C29/16G11C29/46G11C29/52G11C29/70G06F3/0604
Inventor F·罗里C·切拉福利G·卡列洛J·帕里
Owner MICRON TECH INC