Three-dimensional memory and three-dimensional memory manufacturing method

Abstract

The invention provides a three-dimensional memory and a three-dimensional memory manufacturing method. The three-dimensional memory comprises a substrate, a stack structure and an external structure,wherein the stack structure and the external structure are arranged on the substrate; the external structure is connected to the peripheral edge of the stack structure, and the external structure is provided with a conductive contact penetrating through the external structure; a channel structure penetrating through the stack structure is arranged in the stack structure; a conductor extending parallel to the substrate is arranged on one side, deviating from the stack structure, of the substrate, a first conductive part penetrating through the substrate is arranged at one end of the conductor,and the first conductive part is electrically connected with the conductive contact; and the other end of the conductor is provided with a second conductive part, and the second conductive part is embedded into the substrate corresponding to the stack structure and is electrically connected with the channel structure, so a common source contact in the stack structure in related technologies can becanceled, the problem of forming a coupling capacitor is avoided, and the reading and erasing rates of the three-dimensional memory are improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a three-dimensional memory and a method for manufacturing the three-dimensional memory. Background technique [0002] With the rapid development of technologies such as big data, cloud computing, and the Internet of Things, the requirements for memory integration and storage density have also increased. Traditional two-dimensional planar memory has been difficult to meet actual needs and is gradually being replaced by three-dimensional memory. [0003] In the related art, a three-dimensional memory includes a substrate and a stack structure stacked on the substrate, wherein the stack structure includes a plurality of gate layers and a plurality of insulating layers alternately arranged; the stack structure is provided with a channel structure penetrating through the substrate and A common source contact, a dielectric layer is disposed between the common source contact and the gate...

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a three-dimensional memory and a manufacturing method of the three-dimensional memory to overcome the problem in the related art that coupling capacitance is easily generated between the common source contact and the gate layer

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