Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A light-emitting diode with pipn structure and its preparation method

A technology of light-emitting diodes and structural layers, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of light-emitting diodes’ luminous efficiency decaying too fast, and achieve the effects of reducing electron transmission efficiency, narrowing differences, and increasing collision probability

Active Publication Date: 2021-06-25
XIAMEN CHANGELIGHT CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned technical problems, the present application provides a light-emitting diode with a PIPN structure and its preparation method, so as to solve the problem that the luminous efficiency of the light-emitting diode decays too quickly under high current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-emitting diode with pipn structure and its preparation method
  • A light-emitting diode with pipn structure and its preparation method
  • A light-emitting diode with pipn structure and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0088] Correspondingly, the embodiment of the present application provides a method for preparing a light-emitting diode with a PIPN structure, such as Figure 4 shown, including:

[0089] S101: providing a base;

[0090] S102: sequentially forming an N-type structure layer, a P-type insertion layer, an active layer, an electron blocking layer, and a P-type hole supply layer on the surface of the substrate.

[0091] The cross-sectional structure schematic diagram of the light-emitting diode of the PIPN structure refers to figure 1 , for GaN LEDs, refer to figure 2 , optionally, the N-type structure layer includes: a U-GaN layer and an N-GaN electron supply layer; wherein,

[0092] The N-GaN electron supply layer is located on the surface of the U-GaN layer away from the substrate;

[0093] The active layer includes multiple layers of indium gallium nitride layers and multiple layers of gallium nitride layers alternately stacked;

[0094] The P-type hole supply layer incl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

This application discloses a light-emitting diode with PIPN structure and its preparation method. In the light-emitting diode, a P-type insertion layer is arranged between the active layer and the N-type structure layer. On the one hand, the P-type insertion layer can be used as a barrier for electrons. layer, reducing the electron transport efficiency. On the other hand, due to the existence of the P-type insertion layer, the light-emitting diode changes from the original PIN structure to the PIPN structure, which will greatly reduce the built-in electric field of the entire active layer, and the direction of the built-in electric field is directed from the N-type structure layer to the P type hole supply layer, that is, the electric field force of the built-in electric field on holes hinders the transmission of holes in the active layer to the direction of the N-type structure layer, so the weakening of the built-in electric field is conducive to improving the flow of holes to the N-type structure layer. Layer-wise transmission. The role of the P-type insertion layer in these two aspects can reduce the difference in electron and hole transport efficiency, so that electrons and holes can be evenly distributed in the active layer, greatly improving the collision probability of electrons and holes, thereby improving Radiative recombination efficiency.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and more specifically, to a light emitting diode with a PIPN structure and a preparation method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED), also called an electroluminescent diode, is a core component of an LED lamp. With the rapid development of light-emitting diode technology, light-emitting diodes are more and more widely used in various fields. [0003] III-V nitrides, due to their direct bandgap semiconductor characteristics, have excellent physical properties such as large forbidden band width, high breakdown electric field, and high electron saturation mobility, and have received extensive attention in the fields of electronics and optics. Among them, the blue-green light-emitting diode with GaN base as the main material has made great progress in lighting, display and digital. [0004] However, the current nitride light-emi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/32
CPCH01L33/0012H01L33/0075H01L33/145H01L33/32
Inventor 卓祥景万志程伟蔺宇航尧刚
Owner XIAMEN CHANGELIGHT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com