Unlock instant, AI-driven research and patent intelligence for your innovation.

Electroplating copper solution and electroplating method for filling through holes of IC carrier board

A technology of electroplating copper and carrier plate, applied in the field of material electrochemistry, which can solve the problems of high equipment cost, void in electroplating process, large resistance, etc., and achieve the effect of improving conductivity and reliability

Active Publication Date: 2021-06-29
SHENZHEN CHENGGONG CHEM
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the above-mentioned technologies, the present invention provides a copper electroplating solution and an electroplating method for filling the through holes of the IC carrier board. The equipment cost of the power supply is high, and the surface copper is thicker and needs to be thinned mechanically many times. It can effectively prevent the shortcomings of unstable signal transmission, large resistance, and excessive power loss due to voids, and further improve the reliability of electronic products.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electroplating copper solution and electroplating method for filling through holes of IC carrier board
  • Electroplating copper solution and electroplating method for filling through holes of IC carrier board
  • Electroplating copper solution and electroplating method for filling through holes of IC carrier board

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] The formula consists of the following:

[0063] Copper methanesulfonate: 220g / L;

[0064] Methanesulfonic acid: 50g / L;

[0065] Chloride ion: 50mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0066] Sodium 3-mercapto-1-propanesulfonate (MPS): 4mg / L;

[0067] Sodium dihexyl succinate: 60mg / L;

[0068] Nitrotetrazolium blue chloride (NTBC): 50mg / L;

[0069] Solution preparation process: Take 1L solution as an example, take 300ml of water, add copper methanesulfonate: 220g; methanesulfonic acid: 50g, copper chloride dihydrate: 0.114g, sodium 3-mercapto-1-propanesulfonate ( MPS): 0.004g; sodium dihexyl succinate sulfonate: 0.06g; nitro blue tetrazolium chloride (NTBC): 0.05g, stir to dissolve, and then add water to the liquid level to 1L.

[0070] Process parameters for electroplating using the copper electroplating solution prepared in this example: spray: 5min, solution exchange time: 5min, temperature: 35±2°...

Embodiment 2

[0073] The formula consists of the following:

[0074] Copper methanesulfonate: 200g / L;

[0075] Methanesulfonic acid: 50g / L;

[0076] Chloride ion: 50mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0077] Sodium 3-mercapto-1-propanesulfonate (MPS): 4mg / L;

[0078] Sodium dihexyl succinate: 60mg / L;

[0079] Nitrotetrazolium blue chloride (NTBC): 120mg / L;

[0080] Solution preparation process: Take 1L solution as an example, take 300ml of water, add copper methanesulfonate: 200g; methanesulfonic acid: 50g, copper chloride dihydrate: 0.114g, sodium 3-mercapto-1-propanesulfonate ( MPS): 0.004g; sodium dihexyl succinate sulfonate: 0.06g; nitro blue tetrazolium chloride (NTBC): 0.12g, stir to dissolve, and then add water to the liquid level to 1L.

[0081] Process parameters for electroplating using the copper electroplating solution prepared in this example: spray: 5min, solution exchange time: 5min, temperature: 35±2...

Embodiment 3

[0084] The formula consists of the following:

[0085] Copper methanesulfonate: 220g / L;

[0086] Methanesulfonic acid: 60g / L;

[0087] Chloride ion: 50mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0088] Sodium 3-mercapto-1-propanesulfonate (MPS): 2mg / L;

[0089] Sodium dihexyl succinate: 60mg / L;

[0090] Diphenylmethane dye: 140mg / L;

[0091] Solution preparation process: Take 1L solution as an example, take 300ml of water, add copper methanesulfonate: 220g; methanesulfonic acid: 60g, copper chloride dihydrate: 0.114g, sodium 3-mercapto-1-propanesulfonate ( MPS): 0.002g; sodium dihexyl succinate sulfonate: 0.06g; diphenylmethane dye: 0.14g, stir to dissolve, and then add water to the liquid level to 1L.

[0092] Process parameters for electroplating using the copper electroplating solution prepared in this example: spray: 5min, solution exchange time: 10min, temperature: 25±2°C, current density: 1.2A / dm 2 , th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
concentrationaaaaaaaaaa
Login to View More

Abstract

The invention discloses an electroplating copper solution and an electroplating method for filling the through holes of an IC carrier board. The electroplating copper solution comprises the following components according to the concentration: copper methylsulfonate: 180-240g / L, methylsulfonic acid: 40-70g / L, chloride ion: 30-50mg / L, 3-mercapto-1-propanesulfonate sodium (MPS): 2-5mg / L, dihexyl succinate sodium sulfonate: 40-100mg / L, chloride Nitrotetrazolium blue (NTBC): 100-180mg / L, DI pure water: balance. The above components are uniformly mixed to form the electroplating copper solution for filling the through hole of the IC substrate; during the electroplating process, the electroplating copper solution causes the copper metal inside the through hole of the IC substrate to preferentially deposit to the center of the through hole to form a butterfly shape, thereby forming Filling the two blind holes can prevent the formation of voids; and the electroplating solution can completely fill a through hole with a depth of 300um, a diameter of 130um, and a width of 90um in the middle, and the surface copper thickness is only 8.5um.

Description

technical field [0001] The invention relates to the field of material electrochemistry, in particular to an electroplating copper solution and an electroplating method for filling through holes of an IC carrier board. Background technique [0002] In the era of miniaturization of electronic products, high-yield and low-cost integrated circuit (IC) substrates can realize chip-to-board high-density interconnection (HDI) through a reliable method. The IC carrier board is the highest level in the field of PCB miniaturization technology, providing the connection between the IC chip and the PCB, which is realized through the electrical network of conductive copper traces and vias. Through-hole interconnects are key factors in the miniaturization, speed and portability of consumer electronics. Trace density has increased dramatically over the past few decades, and to meet today's printed circuit design requirements including thin core materials, fine trace widths, and smaller diam...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/38C25D5/02C25D7/04C25D17/10C25D21/10
CPCC25D3/38C25D5/02C25D7/04C25D17/10C25D21/10
Inventor 孙道豫姚吉豪
Owner SHENZHEN CHENGGONG CHEM