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Preparation method of gan device structure with enhanced two-dimensional electron gas

A device structure and barrier layer technology, applied in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as the inability to effectively improve the two-dimensional electron gas density of GaN HEMT devices, reduce interface defects, and improve device performance. , the effect of increasing the density of two-dimensional electron gas

Active Publication Date: 2020-12-22
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a GaN device structure with improved two-dimensional electron gas, which is used to solve the problem that the two-dimensional electron gas density of GaN HEMT devices cannot be effectively improved in the prior art. The problem

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  • Preparation method of gan device structure with enhanced two-dimensional electron gas
  • Preparation method of gan device structure with enhanced two-dimensional electron gas
  • Preparation method of gan device structure with enhanced two-dimensional electron gas

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Embodiment 1

[0040] see Figure 1 to Figure 4 , the present embodiment provides a method for preparing a semiconductor device structure, characterized in that it includes the following steps:

[0041] 1) providing a substrate 100, forming a channel layer 101 above the substrate 100;

[0042] 2) forming a first barrier layer 102 above the channel layer 101;

[0043] 3) dividing the channel layer 101 into a first region 101a and a second region 101b, and removing the first barrier layer 102 above the first region 101a;

[0044] 4) Forming a second barrier layer 103 above the first region 101a.

[0045] In step 1), see figure 1 The S1 step and figure 2 , a substrate 100 is provided, and a channel layer 101 is formed on the substrate 100 .

[0046] As an example, the substrate 100 includes a SiC substrate or a Si substrate, and the channel layer 101 includes a GaN layer. In this embodiment, the substrate 100 is a Si (111) substrate. The thickness of the GaN layer is about 1 micron.

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Embodiment 2

[0059] This embodiment provides a method for fabricating a semiconductor device structure. Compared with Embodiment 1, the main difference of this embodiment is at least that: the second region is formed above the first region and the first barrier layer. After removing the barrier layer, the second barrier layer above the first barrier layer is removed. Compared with Embodiment 1, in this embodiment, the device structure with higher planarity is obtained by removing the second barrier layer above the first barrier layer.

[0060] The method for removing the second barrier layer above the first barrier layer includes chemical mechanical polishing, photolithography and other processes. Other implementations of this embodiment are the same as those of Embodiment 1, and will not be repeated here.

[0061] In summary, the present invention provides a method for fabricating a semiconductor device structure, comprising the following steps: providing a substrate, forming a channel l...

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Abstract

The invention provides a preparation method of a GaN device structure for improving two-dimensional electron gas. The preparation method comprises the following steps: providing a substrate, and forming a channel layer on the substrate; forming a first barrier layer on the channel layer; dividing the channel layer into a first region and a second region, and removing the first barrier layer on thefirst region; and forming a second barrier layer on the first region. The first barrier layer on the channel layer is removed and replaced by the second barrier layer so that the two-dimensional electron gas density of the channel layer is improved; surface treatment is performed on the channel layer and secondary epitaxial growth is performed on the second barrier layer so that interface defectscaused by etching damage and heterogeneous material in-situ growth are reduced and the device performance is improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for preparing a GaN device structure with improved two-dimensional electron gas. Background technique [0002] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is a heterojunction field effect transistor, which can be used in the field of ultra-high frequency and ultra-high-speed devices, and has broad application prospects. GaN HEMT devices mainly generate two-dimensional electron gas (2DEG) through polarization to form channels, and the density of two-dimensional electron gas is affected by the degree of polarization of the AlGaN layer above the GaN channel layer and the quality of the AlGaN / GaN interface. [0003] At present, the degree of polarization of the AlGaN layer is generally improved by increasing the Al composition in the AlGaN layer or increasing the thickness of the AlGaN layer, so as to increase the two-dimensional...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335H01L29/20H01L29/10H01L29/778
CPCH01L29/1029H01L29/2003H01L29/66462H01L29/778
Inventor 郁发新莫炯炯刘家瑞
Owner ZHEJIANG UNIV