Manufacturing method of large-size doped sapphire crystal

Abstract

The invention relates to the technical field of sapphires, in particular to a manufacturing method of a large-size doped sapphire crystal, which comprises the following steps: S1, preparation of raw materials: weighing an aluminum oxide material, grinding the raw materials into powder, and doping titanium ions (Ti < 3 + >) and iron ions (Fe < 3 + >) into the powder; S2, filling the crucible with raw materials, setting seed crystals, and sealing the crucible; S3, performing vacuum treatment on the heating furnace; S4, putting the crucible into a heating furnace, and carrying out heat preservation; S5, moving the crucible through a stretching device in a manner that firstly, the crucible is placed at the upper end of a heating furnace, heating treatment is conducted on the crucible for 2-3 h, then the crucible is slowly moved to the lower end of the heating furnace, and heat preservation is conducted at the lower end for 4-5 h; and S6, after the step S5 is completed, carrying out coolingtreatment, wherein the temperature of the upper end of the heating furnace is reduced to 800 DEG C. The method has the characteristics that the dislocation density of sapphire crystals can be increased, and the crystal strength can be improved.

Description

technical field [0001] The invention relates to the technical field of sapphire, in particular to a method for manufacturing a large-size doped sapphire crystal. Background technique [0002] The chemical composition of gem crystals is aluminum oxide; the chemical formula (α-Al2O3) is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. When artificially producing sapphire crystals, the raw materials are heated, and then the raw materials are cooled and crystallized by lowering the temperature. Since the temperature of the heating furnace is lowered during the growth and crystallization, the outside will be the first to cool and crystallize during crystallization. , and the inside will crystallize last, resulting in a small dislocation density of the crystal, resulting in poor strength of the sapphire crystal. Contents of the invention [0003] The purpose of the present invention is ...

AI Technical Summary

Problems solved by technology

When artificially producing sapphire crystals, the raw materials are heated, and then the raw materials are cooled and crystallized by lowering the temperature. Since the temperature of the heating furnace is lowered during the growth and crystallization, the outside will be the first to cool and crystallize during crystallization. , and the inside will crystallize last, resulting in a small dislocation density of the crystal, resulting in poor strength of the sapphire crystal