MOS gate transistor and construction method thereof

Abstract

The invention discloses an MOS gate transistor and a construction method thereof. The MOS gate transistor comprises an emitter, a polycrystalline silicon gate structure, an n type polycrystalline silicon layer, a p base region, an n+ type emitter region, an n- type drift region, an n- type buffer region, a p type collector region and a collector, wherein the n type polycrystalline silicon layer isarranged above the n- type drift region, and the p base region and the n+ type emitter region are formed in the n type polycrystalline silicon layer; the polycrystalline silicon gate structure is arranged on the n type polycrystalline silicon layer and comprises a gate oxide layer, a polycrystalline silicon gate film and silicide containing boron and phosphorus which are arranged from bottom to top, and an emitter is arranged above the silicide containing boron and phosphorus; contact holes are formed above the p base region and the n+ type emitter region; the n+ type buffer region is arranged below the n- type drift region, and the p type collector region and the collector are sequentially arranged below the n+ type buffer region. According to the MOS gate transistor, the values of the on-state voltage and the off-state time can be taken into consideration, and relatively ideal carrier distribution is realized.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a MOS gate transistor and a construction method thereof. Background technique [0002] IGBTs are the most widely used power devices in power electronics applications such as home appliances, industrial, renewable energy, UPS, railway, motor drive and EV&HEV applications. Transistors with very high current handling capabilities due to the presence of bipolar junctions, on the order of hundreds of amps, with a blocking voltage of 6500V. These IGBTs can control loads of hundreds of kilowatts and have a wide range of applications. IGBTs are especially suitable for applications with low frequency, high voltage and load variation, such as locomotive trains, electric vehicles and hybrid electric vehicles. Growth in the renewable energy sector such as solar and wind power has increased the demand for high-power IGBTs. The electric motors used in wind turbines are of the variable speed ty...

AI Technical Summary

Problems solved by technology

[0004] (1) Trench IGBT and IEGT have the disadvantage of low breakdown voltage BVces due to the higher electric field concentration around the bottom of the trench gate

[0005] (2) Traditional IGBT and IEGT structures require finer lithography, resulting in lower Vce(sat)

However, finer photolithography machines are very expensive and the process is very complicated

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