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Thin-film solar cell and preparation method thereof

A technology of solar cells and thin films, applied in the field of solar cells, can solve problems such as personal injury, and achieve the effects of reducing harm, reducing interface recombination loss, and increasing open circuit voltage

Pending Publication Date: 2020-07-28
上海祖强能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the cadmium element used in this layer is a highly toxic heavy metal, and it needs to be equipped with a complex waste liquid treatment system

Method used

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  • Thin-film solar cell and preparation method thereof
  • Thin-film solar cell and preparation method thereof
  • Thin-film solar cell and preparation method thereof

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preparation example Construction

[0059] The embodiment of the present application also provides a method for preparing a thin-film solar cell, which is used to prepare the above-mentioned thin-film solar cell provided in the present application, which includes the following steps:

[0060] (1) Aqueous ammonia and thiourea aqueous solution are used to form a premixed solution;

[0061] (2) Heating the premix solution and the zinc sulfate aqueous solution to 70-85°C respectively, and then mixing them to obtain the deposition solution;

[0062] (3) Put the battery substrate with the back electrode and the light absorbing layer on the surface in turn into the deposition solution, and use the chemical water bath deposition process to form a ZnOS film layer on the surface of the light absorbing layer far away from the back electrode, and obtain a ZnOS film layer formed on the surface of solar cells.

[0063] In the above-mentioned preparation method, a large-area ZnOS film layer can be obtained by chemical water b...

Embodiment 1

[0068] A thin-film solar cell, comprising a glass substrate, a molybdenum layer, a copper indium gallium selenide film layer, a first buffer layer, a second buffer layer and an AZO film layer arranged in sequence, wherein the molybdenum layer is the back electrode of the thin-film solar cell, and the AZO film layer is the front electrode of the thin film solar cell, the copper indium gallium selenide film layer is the light absorbing layer of the thin film solar cell, the first buffer layer 4 is the ZnOS film layer, the second buffer layer 5 is the ZnMgO film layer, and the thickness of the ZnOS film layer is 15nm, and the thickness of the ZnMgO film layer is 35nm.

[0069] In this embodiment, the thin film solar cell is prepared by the following method.

[0070] S1: Premix ammonia water and thiourea aqueous solution to form a premixed solution, respectively heat the premixed solution and zinc sulfate aqueous solution to 70°C, and then mix to obtain a deposition solution; in t...

Embodiment 2

[0077] A thin-film solar cell, comprising a glass substrate, a molybdenum layer, a copper indium gallium selenide film layer, a first buffer layer, a second buffer layer, a high-resistance layer, and an AZO film layer arranged in sequence, wherein the molybdenum layer is the back of the thin-film solar cell electrode, the AZO film layer is the front electrode of the thin film solar cell, the copper indium gallium selenide film layer is the light absorption layer of the thin film solar cell, the first buffer layer 4 is a ZnOS film layer, the second buffer layer 5 is a ZnMgO film layer, and the ZnOS film The thickness of the layer is 30nm, the thickness of the ZnMgO film layer is 60nm, and the high resistance layer is an intrinsic zinc oxide i-ZnO layer.

[0078] In this embodiment, the thin film solar cell is prepared by the following method.

[0079] S1: Premix ammonia water and thiourea aqueous solution to form a premixed solution, respectively heat the premixed solution and ...

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Abstract

The invention relates to the technical field of solar cells, and particularly relates to a thin-film solar cell and a preparation method thereof. The thin-film solar cell comprises a substrate, a backelectrode layer, a light absorption layer, a buffer layer and a front electrode layer which are arranged in sequence, wherein the buffer layer comprises a first buffer layer and a second buffer layerwhich are arranged in a stacked mode, and the first buffer layer comprises a ZnOS film layer. According to the thin-film solar cell provided by the technical scheme of the invention, the ZnOS film layer is adopted to replace a CdS film layer buffer layer in the prior art to prepare the CIGS solar cell without a cadmium buffer layer. According to the thin-film solar cell adopting the ZnOS film layer as the buffer layer, the use of heavy metal cadmium can be avoided, an industrial complex heavy metal treatment process is omitted, and meanwhile, the harm to the body of a production worker can begreatly reduced.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular, to a thin-film solar cell and a preparation method thereof. Background technique [0002] CIGS thin-film solar cells, that is, copper indium gallium selenide thin-film solar cells, are currently the most advanced and one of the thin-film power generation technologies with the highest photoelectric conversion efficiency. In actual scope, there has been a GW-level mass production capacity, and it is further expanding rapidly. CIGS module products can be used not only in photovoltaic power stations, but also in building-integrated photovoltaics (BIPV), photovoltaic roof power generation or photovoltaic-attached buildings (BAPV) and other fields. In addition, the lightness and thinness of flexible copper indium gallium selenide photovoltaic modules can also be used in portable power generation products, such as power generation paper, power generation backpacks, etc. [...

Claims

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Application Information

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IPC IPC(8): H01L31/0749H01L31/18
CPCH01L31/0749H01L31/18Y02E10/541Y02P70/50
Inventor 辛科叶亚宽王磊杨立红
Owner 上海祖强能源有限公司