Micron-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure and its preparation method
A core-shell structure, micro-wire technology, used in semiconductor devices, electrical components, final product manufacturing, etc., can solve problems such as lack of performance ultraviolet light detectors, and achieve enhanced built-in electric field, reduced dark current, and increased potential barrier. high effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0041] A method for preparing a micron-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure, comprising the following steps:
[0042] Photolithography step: photolithography patterns on the silicon substrate coated with silicon dioxide as a mask;
[0043] Etching step: performing etching according to the photolithographic pattern, so that a growth groove is formed on the silicon substrate;
[0044]Micron-wire growing step: growing gallium nitride-aluminum nitride core-shell structure micron-wire on the growth groove;
[0045] Micron-wire stripping step: stripping gallium nitride-aluminum nitride core-shell structure micron-wire;
[0046] Micron-wire transfer step: transferring the gallium nitride-aluminum nitride core-shell structure micron-wire onto the silicon wafer substrate coated with silicon dioxide to form a micron-wire layer;
[0047] The step of plating silver electrodes: plating silver electrodes on the micron wire ...
Embodiment 1
[0060] Such as Figure 1-3 As shown, a preparation method of a micron-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure comprises the following steps:
[0061] Photolithography step: photolithographic pattern is coated on the silicon substrate coated with silicon dioxide as a mask, the photolithographic pattern is an array of stripes and grooves, the resistivity of the silicon substrate is greater than 3000Ω cm, and the crystal orientation of the silicon substrate is ; the thickness of the silicon substrate is 515 μm, and the thickness of silicon dioxide on the silicon substrate is 190 nm;
[0062] Etching step: use potassium hydroxide wet method to etch the photolithographic pattern to form an array of inverted trapezoidal grooves on the silicon substrate. The length of the upper bottom of the inverted trapezoidal grooves is 10 μm, the length of the lower bottom is 4.2 μm, and the groove depth is 4.5 μm. μm, the groove spac...
Embodiment 2
[0075] A method for preparing a micron-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure, comprising the following steps:
[0076] Photolithography step: photolithographic pattern is coated on the silicon substrate coated with silicon dioxide as a mask, the photolithographic pattern is an array of stripes and grooves, the resistivity of the silicon substrate is greater than 3000Ω cm, and the crystal orientation of the silicon substrate is ; the thickness of the silicon substrate is 535 μm, and the thickness of silicon dioxide on the silicon substrate is 210 nm;
[0077] Etching step: use potassium hydroxide wet method to etch the photolithographic pattern, so that an array of inverted trapezoidal grooves is formed on the silicon substrate. The length of the upper bottom of the inverted trapezoidal grooves is 10.3 μm, the length of the lower bottom is 4.5 μm, and the groove depth is 5μm, the groove spacing is 10μm; the sidewall ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| electrical resistivity | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More