Unlock instant, AI-driven research and patent intelligence for your innovation.
Tantalum target with preferred orientation and preparation method thereof
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A preferred orientation, tantalum target material technology, applied in metal material coating process, vacuum evaporation plating, coating, etc. Inhomogeneity and other problems can be achieved to achieve the effect of preferential orientation, uniform organization and simple structure
Active Publication Date: 2022-03-11
GANZHOU NONFERROUS METALLURGICAL RES INST
View PDF9 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
However, during the forging process of the above method, it is easy to press oxides and stains on the surface of the tantalum ingot into the interior of the tantalum ingot, resulting in problems such as uneven internal structure of the target, high impurity content, unstable sputtering speed, and scrapped targets; More critically, forging easily changes the grain orientation of the tantalum ingot, and cannot achieve the preferred orientation of the internal structure of the tantalum ingot, and the proportion of texture components with (111) and (100) textures in the target is low
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
preparation example Construction
[0026] The invention provides a method for preparing a tantalum target with a preferred orientation, comprising the following steps:
[0027] (1) The tantalum ingot is pickled, annealed, heat-treated and cooled in sequence to obtain a pretreated tantalum ingot; the tantalum ingot is a cylindrical tantalum ingot;
[0028] (2) performing torsion deformation on the pretreated tantalum ingot, and the torsion angle of the torsion deformation is greater than or equal to 180°;
[0029] (3) Perform annealing heat treatment and cooling on the twisted and deformed tantalum ingots in sequence;
[0030] (4) Repeat steps (2)~(3) 2~3 times to obtain a tantalum target body;
[0031] (5) Cut off both ends of the tantalum target blank, and cut the remaining part into sheets to obtain a tantalum target with preferred orientation.
[0032] In the invention, the tantalum ingot is pickled, annealed, heat-treated and cooled in sequence to obtain a pretreated high-purity tantalum ingot. In the pr...
Embodiment 1
[0044] (1) Select high-purity tantalum ingots smelted by electron beams, the total content of alloy elements and impurity elements in the tantalum ingots is not higher than 5%, the diameter is 300mm, and the length is 600mm; the tantalum ingots are pickled, and the pickling solution is chemical Pure hydrofluoric acid;
[0045] (2) Perform annealing heat treatment on the pickled tantalum ingot, the annealing temperature is 800°C, the holding time is 30min, and it is cooled with the furnace;
[0046] (3) Clamp the tantalum ingot after annealing heat treatment figure 2 Twisting in the twisting device shown, the twisting method is reverse rotation at both ends, and the rotation angle is 180°;
[0047] (4) Perform annealing heat treatment on the twisted tantalum ingot, the heat treatment temperature is 800°C, the holding time is 30min, and it is cooled with the furnace;
[0048] (5) Repeat steps (3)~(4) twice to obtain a tantalum target body with a preferred orientation;
[004...
Embodiment 2
[0053] Others are the same as in Embodiment 1, only the twist angle in step (3) is changed to 360°.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
diameter
aaaaa
aaaaa
particle size
aaaaa
aaaaa
Login to View More
Abstract
The invention relates to the technical field of target material preparation, and provides a preferred orientation tantalum target material and a preparation method thereof. The present invention controls the orientation of the internal texture of the tantalum ingot through torsional deformation, and causes tangential deformation in the tantalum ingot along the diameter direction through the twisting, thereby changing the orientation of the internal texture of the tantalum ingot, thereby achieving the purpose of controlling the texture of the material. The invention can improve the uniformity of the target structure, reduce the grain size of the target, and increase the proportion of components with dominant (111) and (100) textures through torsional deformation; and the preparation method provided by the invention does not require the tantalum ingot Forging and rolling can reduce the content of impurities mixed into the target.
Description
technical field [0001] The invention relates to the technical field of target preparation, in particular to a preferred orientation tantalum target and a preparation method thereof. Background technique [0002] Physical vapor deposition technology (PVD) is one of the key technologies for preparing high-end semiconductor chips. It can deposit metal or metal compounds in the form of thin films on the surface of silicon wafers or other substrates to prepare high-end semiconductor chips. Physical vapor deposition is completed by sputtering machines, therefore, sputtering targets are key consumables for preparing high-end chips. [0003] The preparation of most existing tantalum targets is mainly achieved by forging and rolling tantalum ingots, and the grain refinement is achieved by controlling the deformation rate and heat treatment, and finally the finished target is obtained. For example, patents with publication numbers CN103572225A, CN104419901A and CN104451567A all prepa...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More