A common circuit for heating and human body induction, steering wheel and car seat
A human body induction and circuit technology, which is applied to vehicle seats, seat heating/ventilation devices, electric heating devices, etc., can solve the problems of large relay size, short life span, and ineffective isolation of isolation circuits, etc., to achieve improved isolation effect, reduced isolation capacitance, and improved isolation performance
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Embodiment 1
[0029] A heating and human body induction shared circuit provided by this embodiment, such as figure 1 As shown, it includes a section of conductive member 30; both ends of the conductive member 30 are simultaneously connected with a human body sensing detection unit 70 and a heating control unit 80; a first-level isolation unit 100 is connected in series between the heating control unit 80 and the conductive member 30. , secondary isolation unit 110 ...... N-level isolation unit 120, N is greater than or equal to 2; each level of isolation unit is composed of MOS transistors, and the gates of the MOS transistors are connected with control signals.
[0030] The number of segments of the conductive member 30 may be one segment, two segments, or multiple segments.
[0031] The conductive member 30 may be any one of metal wires, conductive cloth, and printed circuits, or may be other conductive materials.
[0032] Wherein, the number of series levels of the isolation circuit may...
Embodiment approach 1
[0038] Embodiment 1: a segment of metal wire + secondary isolation unit
[0039] like figure 2 and image 3 As shown, in this embodiment, the conductive member is a metal wire; the isolation circuit includes a primary isolation unit 100 and a secondary isolation unit 110; the primary isolation unit 100 includes a MOS transistor Q1 and a MOS transistor Q4; the The secondary isolation unit 110 includes a MOS transistor Q2 and a MOS transistor Q3;
[0040] The source of the MOS transistor Q2 is connected to one end of the metal wire, and its drain is connected to the source of the MOS transistor Q1; the drain of the MOS transistor Q1 is connected to the heating power supply; the gates of the MOS transistor Q1 and the MOS transistor Q2 are connected together There are control signals;
[0041] The drain of the MOS transistor Q3 is connected to the other end of the metal wire, and its source is connected to the drain of the MOS transistor Q41; the source of the MOS transistor Q...
Embodiment approach 2
[0048] Embodiment 2: A segment of metal wire + greater than or equal to three-level isolation unit
[0049] In this embodiment, on the basis of Embodiment 1, one-level, two-level or multi-level isolation units are added to form a three-level or more-level isolation circuit; for example, Figure 4 As shown, it is a circuit diagram of a three-level isolation circuit, in which MOS transistor Q5 and MOS transistor Q6 form a first-level isolation unit; MOS transistor Q1 and MOS transistor Q4 form a second-level isolation unit; MOS transistor Q2 and MOS transistor Q3 form a three-level isolation unit .
[0050] In a more-level isolation circuit, on the basis of the first embodiment, the second embodiment can be used as an example to increase the number of stages.
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