Photoelectric sensor and manufacturing method thereof, detection substrate and detection device
A technology for photoelectric sensors and detection substrates, applied in radiation control devices, electric solid devices, circuits, etc., can solve the problems of residual electrode materials on the surface of photodiodes, poor mura, etc.
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Embodiment 1
[0048] refer to figure 2 , which shows a flow chart of a method for manufacturing a photoelectric sensor according to an embodiment of the present invention, which may specifically include the following steps:
[0049] Step 201, forming a first electrode on a substrate.
[0050] Such as image 3As shown, the first electrode 32 is formed on the substrate 31 using a patterning process. Specifically, the first electrode film is deposited on the substrate 31, and a tube photoresist is coated on the first electrode film. The photoresist on the first electrode film is exposed and developed, so that the photoresist in a part of the first electrode film is removed, and then the first electrode film at the photoresist removal area is etched away to obtain the first electrode 32. Finally, the remaining photoresist on the first electrode 32 is removed. Wherein, the material of the first electrode 32 is a transparent conductive material, such as ITO (Indium Tin Oxide, Indium Tin Oxide...
Embodiment 2
[0079] The embodiment of the present invention also provides a photoelectric sensor, such as Figure 5 As shown, it includes a substrate 31, a first electrode 32 formed on the substrate 31, a photodiode 33 and a first passivation layer 34 sequentially formed on the first electrode 32, and covers the first passivation layer 34 and the second passivation layer. A flat layer 35 of an electrode 32; the photosensor also includes a second electrode 36 formed on the flat layer 35, the second electrode 36 is connected with the photodiode 33 through the first via hole that runs through the flat layer 35 and the first passivation layer 34 .
[0080] Such as Figure 5 As shown, the photosensor further includes a third electrode 37 , and the third electrode 37 partially covers the flat layer 35 and the second electrode 36 .
[0081] Wherein, the ratio between the orthographic projection area of the first via hole penetrating the planar layer 35 and the first passivation layer 34 on th...
Embodiment 3
[0086] refer to Figure 6 , showing a schematic plan view of a detection substrate according to an embodiment of the present invention, Figure 7 shows a cross-sectional view of a detection substrate according to an embodiment of the present invention, Figure 7 is along Figure 6 Sectional view of section D-D' shown, while Figure 5 is along Figure 6 The sectional view of the section C-C'.
[0087] An embodiment of the present invention also provides a detection substrate, including the above-mentioned photoelectric sensor.
[0088] In addition, the detection substrate also includes a thin film transistor, and the thin film transistor includes: a substrate 311; a gate 314 formed on the substrate 311; a gate insulating layer 312 covering the gate 314 and the substrate 311; an active layer formed on the gate insulating layer 312 315; the source-drain electrode layer partially covering the gate insulating layer 312 and the active layer 315, the source-drain electrode layer...
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