A photoelectric sensor and its manufacturing method, detection substrate and detection device
A technology for photoelectric sensors and detection substrates, applied in radiation control devices, electric solid devices, circuits, etc., can solve problems such as mura defects, residual electrode materials on the surface of photodiodes, etc., and achieve the effect of avoiding mura defects and improving yield
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Embodiment 1
[0048] refer to figure 2 , showing a flowchart of a method for manufacturing a photoelectric sensor according to an embodiment of the present invention, which may specifically include the following steps:
[0049] Step 201, forming a first electrode on a substrate.
[0050] like image 3As shown, a patterning process is used to form the first electrode 32 on the substrate 31. Specifically, a first electrode film is deposited on the substrate 31, a tube photoresist is coated on the first electrode film, and a mask is used for the first electrode film. The photoresist on an electrode film is exposed and developed, so that the photoresist in a part of the first electrode film is removed, and then the first electrode film in the photoresist removal area is etched away to obtain a first electrode 32. Finally, the remaining photoresist on the first electrode 32 is removed. The material of the first electrode 32 is a transparent conductive material, such as ITO (Indium Tin Oxide,...
Embodiment 2
[0079] The embodiment of the present invention also provides a photoelectric sensor, such as Figure 5 As shown, it includes a substrate 31, a first electrode 32 formed on the substrate 31, a photodiode 33 and a first passivation layer 34 sequentially formed on the first electrode 32, and covering the first passivation layer 34 and the first passivation layer 34. A flat layer 35 of an electrode 32; the photosensor further includes a second electrode 36 formed on the flat layer 35, the second electrode 36 is connected to the photodiode 33 through a first via penetrating the flat layer 35 and the first passivation layer 34 .
[0080] like Figure 5 As shown, the photosensor further includes a third electrode 37 that partially covers the flat layer 35 and the second electrode 36 .
[0081] The ratio between the orthographic projection area of the first via hole penetrating the flat layer 35 and the first passivation layer 34 on the substrate 31 and the orthographic projection...
Embodiment 3
[0086] refer to Image 6 , showing a schematic diagram of the plane structure of a detection substrate according to an embodiment of the present invention, Figure 7 A cross-sectional view of a detection substrate according to an embodiment of the present invention is shown, Figure 7 is along Image 6 a sectional view of section D-D' is shown, while Figure 5 is along Image 6 The cross-sectional view of the described section C-C'.
[0087] An embodiment of the present invention also provides a detection substrate, including the above-mentioned photoelectric sensor.
[0088] In addition, the detection substrate further includes a thin film transistor, and the thin film transistor includes: a substrate 311 ; a gate electrode 314 formed on the substrate 311 ; a gate insulating layer 312 covering the gate electrode 314 and the substrate 311 ; an active layer formed on the gate insulating layer 312 315; the source-drain electrode layer partially covering the gate insulating ...
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