Gating device and preparation method thereof

Abstract

The invention provides a gating device and a preparation method thereof, and relates to the technical field of micro-nano electronic devices. The gating device comprises a lower electrode, a first insulating layer, a second insulating layer and an upper electrode which are sequentially arranged on a substrate from bottom to top, wherein the lower electrode is an inert electrode, the upper electrode is an active electrode, and the metal ion mobility of the first insulating layer is smaller than that of the second insulating layer. According to the scheme of the invention, two insulating layerswith different metal ion mobility are arranged between the lower electrode and the upper electrode in the gating device, wherein the two insulating layers are the first insulating layer and the secondinsulating layer, and the metal ion mobility of the first insulating layer is smaller than that of the second insulating layer, so that the re-connection position of the conductive channel is controlled, the randomness of the position of the newly formed conductive channel is reduced, the fluctuation of the threshold voltage in different cyclic operations is effectively reduced, and the application of the gating device in a memristor cross array is effectively supported.

Description

technical field [0001] The invention relates to the technical field of micro-nano electronic devices, in particular to a gate device and a preparation method thereof. Background technique [0002] Memristors have the advantages of high integration, high speed, and low power consumption. Memristor cross-arrays based on cross-array structures have very important prospects in non-volatile storage, logic computing, and neuromorphic computing applications. However, the leakage current in memristor interleaved arrays limits the realization of large-scale arrays, and is one of the main bottlenecks for memristors to be practical. [0003] Since the gating device exhibits high-resistance characteristics at low voltages and low-resistance characteristics at high voltages, with the voltage operation strategy, the unselected memristors in the memristor cross array can be in a high-resistance state, reducing the small leakage current. Programmable metallization gating devices are usual...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a gating device and its preparation method in order to solve the problem that the programmable metallization gating device in the prior art has obvious threshold voltage fluctuations and cannot support gating. Application of Devices in Memristor Interleaved Arrays

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