The invention provides a gating device and a preparation method thereof, and relates to the technical field of micro-nano electronic devices. The gating device comprises a lower
electrode, a first insulating layer, a second insulating layer and an upper
electrode which are sequentially arranged on a substrate from bottom to top, wherein the lower
electrode is an
inert electrode, the upper electrode is an
active electrode, and the
metal ion mobility of the first insulating layer is smaller than that of the second insulating layer. According to the scheme of the invention, two insulating layerswith different
metal ion mobility are arranged between the lower electrode and the upper electrode in the gating device, wherein the two insulating
layers are the first insulating layer and the secondinsulating layer, and the
metal ion mobility of the first insulating layer is smaller than that of the second insulating layer, so that the re-connection position of the
conductive channel is controlled, the randomness of the position of the newly formed
conductive channel is reduced, the fluctuation of the
threshold voltage in different cyclic operations is effectively reduced, and the application of the gating device in a
memristor cross array is effectively supported.