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Electrically programmable metal fuse device structure

A metal fuse and device structure technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of smaller fuse cross-sectional area, difficult fuse blowing, unsatisfactory blowing effect, etc.

Inactive Publication Date: 2014-03-12
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After selecting the appropriate fuse length according to the process capability, the experimental data still shows that the fusing effect is not ideal
Especially when the electromigration is not enough to completely disconnect the metal, the cross-sectional area of ​​the fuse becomes smaller, the total resistance of the fuse increases, and the current density decreases. Even if the programming time is increased, the fuse is difficult to be completely blown

Method used

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  • Electrically programmable metal fuse device structure

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Embodiment Construction

[0017] Such as figure 1 As shown, an embodiment of the present invention includes: a metal layer 3 having a contact hole 2, a metal fuse 1 connected between the two metal layers 3, wherein the metal fuse 1 has a serpentine corner 4, The angle A of the serpentine knuckle 4 is equal to 90 degrees.

[0018] The present invention has been described in detail through specific implementations and examples above, but these are not intended to limit the present invention. Without departing from the principle of the present invention, those skilled in the art can also make many modifications and improvements, which should also be regarded as the protection scope of the present invention.

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PUM

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Abstract

The invention discloses an electrically programmable metal fuse device structure comprising metal layers with contact holes, and metal fuses connected between the two metal layers. Each metal fuse is provided with at least one snake-shaped folded angle which is less than or equal to 90 degrees. At least one snake-shaped folded angle is additionally arranged by the electrically programmable metal fuse device structure without additionally increasing size of a device. With application of the snake-shaped folded angle, local current intensity can be increased, temperature can be elevated, and migration of metal ions can be physically obstructed so that partial metal ions are accumulated due to the fact that the partial metal ions cannot pass the snake-shaped folded angle part smoothly. After migration and exhausting of the metal ions before the snake-shaped folded angle part, vacant parts are accumulated to form a visible hollow cavity, and the device is disconnected (programming is succeeded). The snake-shaped folded angle is the key part of occurrence of electro-migration disconnection. With the additionally arranged snake-shaped folded angle structure of the device, efficiency of occurrence of electro-migration disconnection of the device can be increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electric programming metal fuse device structure. Background technique [0002] Fuse devices are one-time programming devices, which cannot be screened for good products through testing, so the requirements for device yield are very high. Existing electric programming fuse devices are generally made of polysilicon materials, and the yield rate of finished products can maintain a high level, so they are widely used in various circuit designs. However, in some special cases, such as silicon germanium and other processes that do not have polysilicon, or when security chips must be protected by metal fuses, metal fuses are irreplaceable. Metal fuse devices generally have two programming (fusing) methods: electrical programming; laser programming. The uniformity of laser programming is good, but it is necessary to open the outer passivation layer and use an external las...

Claims

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Application Information

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IPC IPC(8): H01L23/525
Inventor 仲志华祝奕琳
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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