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Photovoltaic module resisting potential induced degradation

A potential-induced attenuation, photovoltaic module technology, applied in the field of solar photovoltaic, can solve the problems of power station loss, photovoltaic module power loss, affecting the reliability and stability of photovoltaic modules, etc., to reduce reflection, improve absorption rate, and improve photoelectric conversion efficiency. Effect

Pending Publication Date: 2018-05-29
QINGHAI HUANGHE HYDROPOWER DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the current photovoltaic modules, the phenomenon of potential-induced attenuation, which seriously affects the reliability and stability of the operation of photovoltaic modules, often occurs. In the photovoltaic modules with potential-induced attenuation, the metal frame of the photovoltaic Adjacent solar cells, the strong electric field formed on the metal frame will cause the free metal ions such as sodium calcium in the glass of the photovoltaic module to migrate to the surface of the solar cell, and these metal ions collected on the surface of the solar cell will further diffuse to In the internal materials of solar cells, it affects various electrical performance parameters such as the photoelectric conversion efficiency of solar cells
Potential-induced attenuation can cause photovoltaic modules to lose more than 50% of their power, which will cause huge losses to power stations that use photovoltaic modules on a large scale

Method used

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Examples

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Embodiment 1

[0021] refer to figure 1 and figure 2 As shown, the present embodiment provides a photovoltaic module that resists potential-induced attenuation, including a backplane 1, a first EVA layer 2, a solar cell layer 3, a second EVA layer 4, and a glass 5 arranged in sequence. The battery sheet layer 3 includes a plurality of solar battery sheets 31 arranged in an array, wherein a silicon nitride film layer 6 is arranged between the second EVA layer 4 and the glass 5, and the silicon nitride film layer 6 It is used to prevent metal ions in the glass 5 from migrating toward the solar cells 31 .

[0022] The anti-potential induced attenuation photovoltaic module blocks the free metal ions in the glass 5 from moving towards the solar cells by setting a silicon nitride film layer 6 between the second EVA layer 4 and the glass 5 31 migration, which effectively weakens the potential-induced attenuation phenomenon of the photovoltaic module and prevents the photoelectric conversion effi...

Embodiment 2

[0035] refer to image 3 As shown, the present invention also provides another anti-potential-induced degradation photovoltaic module, including a back plate 1, a first EVA layer 2, a solar cell layer 3, a second EVA layer 4 and a glass 5 arranged in sequence, the The solar battery sheet layer 3 includes a plurality of solar battery sheets 31 arranged in an array, wherein a silicon dioxide thin film layer 7 is arranged between the second EVA layer 4 and the glass 5, and the silicon dioxide thin film layer 7 is used to prevent metal ions in the glass 5 from migrating toward the solar cells 31 .

[0036] Similarly, the silicon dioxide thin film layer 7 can not only block the free metal ions such as sodium ions and calcium ions in the glass 5 from migrating to the solar cell layer 3, but also the silicon dioxide thin film Layer 7 can also be used as an anti-reflection film to reduce the reflection of the photovoltaic module on sunlight, increase the absorption rate of incident lig...

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Abstract

The invention discloses a photovoltaic module resisting potential induced degradation. According to the photovoltaic module, a silicon nitride thin film layer or a silicon dioxide thin film layer is arranged between a second EVA layer and glass of the photovoltaic module, thus free metal ions such as sodium ions and calcium ions in the glass are effectively blocked from migrating onto a solar cellslice layer of the photovoltaic module, so that the influence of a potential induced degradation phenomenon on the photovoltaic module is weakened; and the silicon nitride thin film layer or the silicon dioxide thin film layer can further serve as an antireflection film, reduces reflection of sun light by means of the photovoltaic module, increases the absorption rate of incident light, and can play a role of improving the photoelectric conversion efficiency of the photovoltaic module.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaics, in particular to a photovoltaic module resistant to potential-induced attenuation. Background technique [0002] In the current photovoltaic modules, the phenomenon of potential-induced attenuation, which seriously affects the reliability and stability of the operation of photovoltaic modules, often occurs. In the photovoltaic modules with potential-induced attenuation, the metal frame of the photovoltaic Adjacent solar cells, the strong electric field formed on the metal frame will cause the free metal ions such as sodium calcium in the glass of the photovoltaic module to migrate to the surface of the solar cell, and these metal ions collected on the surface of the solar cell will further diffuse to In the internal materials of solar cells, it affects various electrical performance parameters such as the photoelectric conversion efficiency of solar cells. Potential-induced degradati...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/048
CPCH01L31/02167H01L31/02168H01L31/0481Y02E10/50
Inventor 卢刚常纪鹏张治何凤琴钱俊
Owner QINGHAI HUANGHE HYDROPOWER DEV
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