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Ultrasonic welding method

A technology of ultrasonic welding and welding method, which is applied in the manufacture of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc., can solve the problems such as the inability to effectively improve the welding reliability and welding efficiency, and the poor improvement effect.

Active Publication Date: 2020-08-25
KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the improvement effect of this method is not good enough, and it cannot effectively improve welding reliability and welding efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] S1: Clean the surface of the chip and the substrate to remove impurities other than metal and metal oxide on the surface of the solder ball and the pad; apply a 2mm thick photoresist on the substrate, and remove the photoresist on the surface of the pad remove.

[0061] S2: Place the substrate in the reaction chamber, then vacuumize the reaction chamber and then fill it with high-purity oxygen, repeat three times, and then pass high-purity oxygen into the reaction chamber to fill the chamber with high-purity oxygen, the air pressure is 1 atmospheric pressure; heat the chamber to 275°C, continuously feed high-purity oxygen (gas flow rate of 40sccm) during the period, and continuously discharge the reacted gas, continue to react for 6 hours, and oxidize a layer of metal oxide on the surface of the pad; figure 2 shown.

[0062] S3: Lowering the temperature of the reaction chamber, exhausting the oxygen in the chamber, taking out the parts to be welded, and removing the p...

Embodiment 2

[0069] S1: Clean the surface of the chip and the substrate to remove impurities other than metal and metal oxide on the surface of the solder ball and the pad; apply a 3mm thick photoresist on the substrate, and remove the photoresist on the surface of the pad remove.

[0070] S2: Place the substrate in the reaction chamber, then vacuumize the reaction chamber and then fill it with high-purity oxygen, repeat three times, and then pass high-purity oxygen into the reaction chamber to fill the chamber with high-purity oxygen, the pressure is 1 atmospheric pressure; heat the chamber to 270°C, continuously feed high-purity oxygen (gas flow rate of 45 sccm) during this period, and continuously discharge the reacted gas, continue to react for 6 hours, and oxidize a layer of metal oxide on the surface of the pad.

[0071] S3: Lowering the temperature of the reaction chamber, exhausting the oxygen in the chamber, taking out the parts to be welded, and removing the photoresist on the su...

Embodiment 3

[0078] S1: Clean the surface of the chip and the substrate to remove impurities other than metal and metal oxide on the surface of the solder ball and the pad; apply a 3mm thick photoresist on the substrate, and remove the photoresist on the surface of the pad remove.

[0079] S2: Place the substrate in the reaction chamber, then vacuumize the reaction chamber and then fill it with high-purity oxygen, repeat three times, and then pass high-purity oxygen into the reaction chamber to fill the chamber with high-purity oxygen, the pressure is 1 atmospheric pressure; heat the chamber to 280°C, continuously feed high-purity oxygen (gas flow rate of 43 sccm) during this period, and continuously discharge the reacted gas, continue to react for 8 hours, and oxidize a layer of metal oxide on the surface of the pad.

[0080] S3: Lowering the temperature of the reaction chamber, exhausting the oxygen in the chamber, taking out the parts to be welded, and removing the photoresist on the su...

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Abstract

The invention provides an ultrasonic welding method, which comprises the following steps of a) performing oxidation treatment on a bonding pad on a substrate to form a metal oxide layer on the surfaceof the bonding pad, and b) carrying out ultrasonic welding on the bonding pad on the substrate obtained in the step a) and the solder ball on the chip under the gas condition containing reducing formic acid and the condition of pressurizing the welding surface to obtain a weldment. Before ultrasonic welding, the bonding pad is subjected to oxidation treatment, a layer of metal oxide is pre-oxidized on the surface of metal to be welded; in the case of ultrasonic welding, continuously introduced formic acid gas is used for reducing oxides on the metal surface, a large number of metal micro-nanoparticles are reduced from the surface metal oxide layer in the reduction process; the particles are beneficial to contact of the to-be-welded surface in the ultrasonic welding process, meanwhile, the metal particles are prone to plastic flowing under the action of ultrasonic energy, surface deformation of the to-be-welded surface is facilitated, and then the welding reliability and the welding reliability are effectively improved.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to an ultrasonic welding method. Background technique [0002] Wire bonding (also known as pressure bonding or wire bonding) technology is the most commonly used method for circuit interconnection between integrated circuit chips and packaging structures. Wire bonding technologies mainly include ultrasonic bonding, thermocompression bonding, and thermosonic pen. There are three kinds of bonding. Through the above-mentioned bonding technology, thin metal wires or metal strips are sequentially placed on the chip and the lead frame or the pad of the package substrate to form circuit interconnection. [0003] With the continuous development and progress of the integrated circuit industry, the monolithic integration of the chip is getting higher and higher, the power consumption is getting higher and higher, and the requirements for packaging technology are also getting high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/603
CPCH01L24/81H01L2224/81031H01L2224/81051H01L2224/81054H01L2224/81205
Inventor 何亮亮王英辉
Owner KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI