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A kind of ultrasonic welding method

A technology of ultrasonic welding and welding method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve the problems that the welding reliability and welding efficiency cannot be effectively improved, and the improvement effect is not good.

Active Publication Date: 2021-11-30
KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the improvement effect of this method is not good enough, and it cannot effectively improve welding reliability and welding efficiency

Method used

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  • A kind of ultrasonic welding method
  • A kind of ultrasonic welding method
  • A kind of ultrasonic welding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] S1: Clean the surface of the chip and the substrate to remove impurities other than metal and metal oxide on the surface of the solder ball and the pad; apply a 2mm thick photoresist on the substrate, and remove the photoresist on the surface of the pad remove.

[0061] S2: Place the substrate in the reaction chamber, then vacuumize the reaction chamber and then fill it with high-purity oxygen, repeat three times, and then pass high-purity oxygen into the reaction chamber to fill the chamber with high-purity oxygen, the pressure is 1 atmospheric pressure; heat the chamber to 275°C, continuously feed high-purity oxygen (gas flow rate of 40sccm) during the period, and continuously discharge the reacted gas, continue to react for 6 hours, and oxidize a layer of metal oxide on the surface of the pad; figure 2 shown.

[0062] S3: Lowering the temperature of the reaction chamber, exhausting the oxygen in the chamber, taking out the parts to be welded, and removing the photo...

Embodiment 2

[0069] S1: Clean the surface of the chip and the substrate to remove impurities other than metal and metal oxide on the surface of the solder ball and the pad; apply a 3mm thick photoresist on the substrate, and remove the photoresist on the surface of the pad remove.

[0070] S2: Place the substrate in the reaction chamber, then vacuumize the reaction chamber and then fill it with high-purity oxygen, repeat three times, and then pass high-purity oxygen into the reaction chamber to fill the chamber with high-purity oxygen, the pressure is 1 atmospheric pressure; heat the chamber to 270°C, continuously feed high-purity oxygen (gas flow rate of 45 sccm) during this period, and continuously discharge the reacted gas, continue to react for 6 hours, and oxidize a layer of metal oxide on the surface of the pad.

[0071] S3: Lowering the temperature of the reaction chamber, exhausting the oxygen in the chamber, taking out the parts to be welded, and removing the photoresist on the su...

Embodiment 3

[0078] S1: Clean the surface of the chip and the substrate to remove impurities other than metal and metal oxide on the surface of the solder ball and the pad; apply a 3mm thick photoresist on the substrate, and remove the photoresist on the surface of the pad remove.

[0079] S2: Place the substrate in the reaction chamber, then vacuumize the reaction chamber and then fill it with high-purity oxygen, repeat three times, and then pass high-purity oxygen into the reaction chamber to fill the chamber with high-purity oxygen, the pressure is 1 atmospheric pressure; heat the chamber to 280°C, continuously feed high-purity oxygen (gas flow rate of 43 sccm) during this period, and continuously discharge the reacted gas, continue to react for 8 hours, and oxidize a layer of metal oxide on the surface of the pad.

[0080] S3: Lowering the temperature of the reaction chamber, exhausting the oxygen in the chamber, taking out the parts to be welded, and removing the photoresist on the su...

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Abstract

The invention provides an ultrasonic welding method, comprising the following steps: a) oxidizing the pad on the substrate to form a metal oxide layer on the surface of the pad; Under the condition of surface pressure, ultrasonically weld the pads on the substrate obtained in step a) and the solder balls on the chip to obtain a welded part. In the present invention, before ultrasonic welding, the welding pad is oxidized first, and a layer of metal oxide is pre-oxidized on the surface of the metal to be welded. The metal oxide layer reduces a large number of metal micro-nano particles during the reduction process. These particles are beneficial to the contact of the surface to be welded in the process of ultrasonic welding. At the same time, these metal particles are prone to plastic flow under the action of ultrasonic energy, which is beneficial to the welding process. The surface deformation of the welding surface can effectively improve the welding and welding reliability.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to an ultrasonic welding method. Background technique [0002] Wire bonding (also known as pressure bonding or wire bonding) technology is the most commonly used method for circuit interconnection between integrated circuit chips and packaging structures. Wire bonding technologies mainly include ultrasonic bonding, thermocompression bonding, and thermosonic pen. There are three kinds of bonding. Through the above-mentioned bonding technology, thin metal wires or metal strips are sequentially placed on the chip and the lead frame or the pad of the package substrate to form circuit interconnection. [0003] With the continuous development and progress of the integrated circuit industry, the monolithic integration of the chip is getting higher and higher, the power consumption is getting higher and higher, and the requirements for packaging technology are also getting high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/603
CPCH01L24/81H01L2224/81031H01L2224/81051H01L2224/81054H01L2224/81205
Inventor 何亮亮王英辉
Owner KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI