Treatment method for oxide on surface of copper

A surface oxide and treatment method technology, applied in the field of electronic packaging, can solve the problems of high equipment cost, copper surface pollution, complex process, etc., and achieve the effect of high average area, low cost and low process requirements

Inactive Publication Date: 2020-09-01
KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, copper is easily oxidized in air, which is the main difficulty and challenge faced by copper bonding technology
[0004] The technical solution for treating copper surface oxide in the prior art mainly uses ion beams to

Method used

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  • Treatment method for oxide on surface of copper
  • Treatment method for oxide on surface of copper

Examples

Experimental program
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Effect test

Embodiment 1

[0043] (1) Put the copper with oxides on the surface in the sealed cavity of the bonding equipment, vacuumize (below 10Pa), pass nitrogen gas for protection, and then heat to 200°C to obtain the copper to be processed.

[0044] (2) Feed into formic acid gas 30min continuously with the flow rate of 20mL / min, make described formic acid gas carry out reduction reaction after the copper surface to be treated that step (1) obtains is adsorbed, obtain the copper that removes surface oxide after desorption.

[0045] Carry out AFM test to the copper that removes surface oxide that the embodiment of the present invention 1 obtains, the result sees figure 2 shown. Depend on figure 2 It can be seen that the treatment method provided by Example 1 of the present invention has a good treatment effect, and the surface roughness of the copper surface obtained after treatment to remove surface oxides is 2.03nm, and the average area is 10455nm 2 ; and the copper surface is less polluted, and ...

Embodiment 2

[0047] (1) Place the copper with oxides on the surface in the sealed cavity of the bonding equipment, vacuumize (below 10Pa), pass nitrogen gas for protection, and then heat to 175°C to obtain the copper to be processed.

[0048] (2) Feed into formic acid gas 30min continuously with the flow rate of 20mL / min, make described formic acid gas carry out reduction reaction after the copper surface to be treated that step (1) obtains is adsorbed, obtain the copper that removes surface oxide after desorption.

[0049] Carry out AFM test to the copper that removes surface oxide that the embodiment of the present invention 2 obtains, the result sees figure 2 shown. Depend on figure 2 It can be seen that the treatment method provided by Example 2 of the present invention has a good treatment effect, and the surface roughness of the copper surface obtained after treatment to remove surface oxides is 1.94nm, and the average area is 9800nm 2 ; and the copper surface is less polluted, a...

Embodiment 3

[0051] (1) Put the copper with oxides on the surface in the sealed cavity of the bonding equipment, vacuumize (below 10Pa), pass nitrogen gas for protection, and then heat to 225°C to obtain the copper to be processed.

[0052] (2) Feed into formic acid gas 30min continuously with the flow rate of 20mL / min, make described formic acid gas carry out reduction reaction after the copper surface to be treated that step (1) obtains is adsorbed, obtain the copper that removes surface oxide after desorption.

[0053] Carry out AFM test to the copper that removes surface oxide that the embodiment of the present invention 3 obtains, the result sees figure 2 shown. Depend on figure 2 It can be seen that the treatment method provided by Example 3 of the present invention has a good treatment effect, and the surface roughness of the copper surface obtained after treatment to remove surface oxides is 2.02nm, and the average area is 10350nm 2 ; and the copper surface is less polluted, an...

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Abstract

The invention provides a treatment method for oxide on the surface of copper. The treatment method comprises the following steps: (a) heating copper with the oxide on the surface under the inert gas shielding condition to obtain to-be-treated copper; and (b) enabling the to-be-treated copper obtained in (a) to make contact with formic acid gas to obtain copper with the oxide removed from the surface. Compared with the prior art, the treatment method provided by the invention has the advantages that the formic acid gas makes contact with the heated copper with the oxide on the surface, so thatthorough surface cleaning of the copper with the oxide on the surface is realized. The treatment method provided by the invention has a good treatment effect; the treated copper with the oxide removedfrom the surface has reduced surface roughness, high mean area and little pollution to the copper surface and can be directly used for copper bonding; and meanwhile, the treatment method is simple inprocess, lower in technological requirement and low in cost, and is suitable for industrial production.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to a method for treating copper surface oxide. Background technique [0002] Electronic packaging is to install the integrated circuit built-in chip for external use. It plays a fixed and sealed role, protects the integrated circuit built-in chip, and enhances the ability to adapt to the environment. The riveting point on the integrated circuit chip is also the contact point, which is welded to the packaged tube shell. on the pin. In order to continue or even exceed Moore's Law, continuously increase packaging density, shorten interconnection length and reduce power consumption, and realize multi-functional and miniaturized electronic products, in recent years, electronic products such as smartphones and tablet computers have gradually adopted three-dimensional system packaging technology. Bonding refers to the close bonding of two substrates of the same (such as Cu an...

Claims

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Application Information

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IPC IPC(8): C23G5/00
CPCC23G5/00
Inventor 王英辉陆阳婷
Owner KUNSHAN BRANCH INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCI
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