Waterproof film layer and its preparation method, application and product
A technology of waterproof membrane layer and product, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve problems such as poor hydrophobic performance of membrane layer
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[0035] The plasma suitable for use in the preparation method of the present invention includes non-balanced plasma, such as those generated by radio frequency (RF), microwave or direct current (DC). Plasma. They can operate at atmospheric pressure, or under pressure below atmospheric pressure. It is worth noting that the plasma source may come from a monomeric compound, that is, there is no other gas, or other gases, such as inert gas, or mixed with other gases. A unit for providing plasma is referred to as a plasma source, wherein the corresponding portion of the following is visible for the description of the plasma source. The plasma consisting of only the monomer compound can be obtained by first, first, the reaction device is pulled up as vacuum, and then the reaction device is blown with the monomeric compound. The reaction device is long enough. Other gases in the reactive device are discharged.
[0036] The plasma enhanced chemical vapor deposition (PECVD) process has many...
Embodiment 1
[0074] Step (1) Pumping the vacuum in the reaction chamber to 150 mTrograms, and nitrogen;
[0075] The substrate is a solid material that is an electrical component, and the surface of the substrate is prepared, and any of the surfaces thereof can be exposed to the environment of the international industrial waterproof level standard IPX6.
[0076] The volume of the reaction chamber is 560L, and the temperature of the reaction chamber is controlled at 50 The flow of nitrogen as a plasma source is 220 sccm.
[0077] Step (2) Get into the reaction feedstock to the vacuum degree of 220 m holder, turn on plasma discharge;
[0078] The reaction feedstock steam is to atomize the reaction feedstock by the feed pump, volatilized, by low pressure 150 m holder into the reaction chamber, the flow rate of the feed feed material is 120 μl / min;
[0079] The ingredients of the reaction feedstock are as follows:
[0080] The unsaturated fluorocarbon compound in the reaction raw material is:
...
Embodiment 2
[0096] Step (1) Pumping the vacuum in the reaction chamber to 160 m holder, an argon is introduced;
[0097] The substrate is a solid material that is an electrical component, and the surface of the substrate is prepared, and any of the surfaces thereof can be exposed to the environment of the international industrial waterproof level standard IPX5.
[0098] The volume of the reaction chamber is 550L, and the temperature of the reaction chamber is controlled at 45 The flow of argon as a plasma source is 200 sccm.
[0099] Step (2) Get into the reaction raw material to the vacuum is 200 mTrograms, and the plasma discharge is turned on;
[0100] The vapor passing into the reaction feedstock is to atomize the reaction feedstock by the feed pump, volatilized, from a low pressure 150 m holder, the flow rate of 150 μl / min;
[0101] The ingredients of the reaction feedstock are as follows:
[0102] The unsaturated fluorocarbon compound in the reaction raw material is:
[0103]
[01...
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Abstract
Description
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