Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of high cost, achieve low cost, simple process, and realize the effect of rewiring requirements
Active Publication Date: 2020-09-08
厦门通富微电子有限公司
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- Abstract
- Description
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- Application Information
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Problems solved by technology
Some semiconductor devices still require re-wiring after the bump structure is fabricated, but the process of forming the re-wiring layer usually involves more processes and is more expensive
Method used
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[0031] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only part of the embodiments of the application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0032] see figure 1 , figure 1 It is a schematic structural diagram of an embodiment of a semiconductor device of the present application, and the semiconductor device includes: a semiconductor substrate 11 , a patterned first metal layer 12 and a plurality of second metal bumps 13 . Specifically, the first surface of the semiconductor substrate 11 has a plurality of conductive pads 111, and the semiconductor substrate 11 can be a wafer that has completed the ...
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The application discloses a semiconductor device and a manufacturing method thereof. The semiconductor device disclosed by the application comprises a semiconductor substrate, a patterned first metallayer and a plurality of second metal bumps. The first metal layer is arranged above each conductive bonding pad of the semiconductor substrate, a first metal layer is bridged between at least two adjacent conductive bonding pads, and the second metal bumps are arranged on the first metal layer and are in one-to-one correspondence with the conductive bonding pads. According to the application, thefirst metal layer is bridged between at least two adjacent conductive pads and thus interconnection between at least two adjacent second metal bumps is realized; furthermore, a mode that the first metal layer is bridged with the conductive bonding pad can be designed according to the rewiring requirement of the semiconductor device and thus the interconnection mode corresponding to the rewiring requirement between the second metal bumps is realized, so that the rewiring requirement of the semiconductor device is realized in the manufacturing process of the patterned first metal layer, an additional rewiring process does not need to be introduced; and the process is simple, and the cost is relatively low.
Description
technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the field of semiconductor technology, in the packaging process of various semiconductor devices, the production of bump structures is one of the key processes, and the bumps are used to provide electrical connections between semiconductor devices and packaging substrates. Some semiconductor devices still require re-wiring after the bump structure is fabricated, but the process of forming the re-wiring layer usually involves more processes and is costly. Therefore, it is necessary to develop a semiconductor device that can meet the rewiring requirements without increasing the rewiring process, and has a simple process and low cost. Contents of the invention [0003] The technical problem mainly solved by the present application is to provide a semiconductor device and i...
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Patent Timeline
Login to View More IPC IPC(8): H01L23/498H01L23/488H01L21/60
CPCH01L23/49838H01L23/49811H01L23/488H01L24/10H01L24/11
Inventor 陈运生
Owner 厦门通富微电子有限公司