A kind of semiconductor device and its manufacturing method
A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of high cost, achieve the effects of low cost, realization of rewiring requirements, and simple process
Active Publication Date: 2022-04-01
厦门通富微电子有限公司
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Problems solved by technology
Some semiconductor devices still require re-wiring after the bump structure is fabricated, but the process of forming the re-wiring layer usually involves more processes and is more expensive
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[0031] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only part of the embodiments of the application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0032] see figure 1 , figure 1 It is a schematic structural diagram of an embodiment of a semiconductor device of the present application, and the semiconductor device includes: a semiconductor substrate 11 , a patterned first metal layer 12 and a plurality of second metal bumps 13 . Specifically, the first surface of the semiconductor substrate 11 has a plurality of conductive pads 111, and the semiconductor substrate 11 can be a wafer that has completed the ...
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The present application discloses a semiconductor device and its manufacturing method. The semiconductor device disclosed in the present application includes a semiconductor substrate, a patterned first metal layer and a plurality of second metal bumps, wherein each conductive pad on the semiconductor substrate A first metal layer is provided, and the first metal layer is bridged between at least two adjacent conductive pads, and the second metal bumps are arranged on the first metal layer and correspond to the conductive pads one by one. In the present application, the interconnection between at least two adjacent second metal bumps is realized by bridging the first metal layer between at least two adjacent conductive pads, and then the second bump can be designed according to the rewiring requirements of the semiconductor device. A metal layer spans the conductive pad to realize the interconnection between the second metal bumps corresponding to the rewiring requirements, so as to realize the rewiring requirements of the semiconductor device in the manufacturing process of the patterned first metal layer , does not need to introduce an additional rewiring process, the process is simple, and the cost is low.
Description
technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the field of semiconductor technology, in the packaging process of various semiconductor devices, the production of bump structures is one of the key processes, and the bumps are used to provide electrical connections between semiconductor devices and packaging substrates. Some semiconductor devices still require re-wiring after the bump structure is fabricated, but the process of forming the re-wiring layer usually involves more processes and is costly. Therefore, it is necessary to develop a semiconductor device that can meet the rewiring requirements without increasing the rewiring process, and has a simple process and low cost. Contents of the invention [0003] The technical problem mainly solved by the present application is to provide a semiconductor device and i...
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IPC IPC(8): H01L23/498H01L23/488H01L21/60
CPCH01L23/49838H01L23/49811H01L23/488H01L24/10H01L24/11
Inventor 陈运生
Owner 厦门通富微电子有限公司