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Etching solution composition for silver-containing metal layer

A composition and etching solution technology, applied in the field of etching solution compositions for silver-containing metal films, can solve problems such as generation of debris, increase metal stability, and decrease in etching performance of etchants, and achieve suppression of damage and excellent etching properties. , Minimize bad deviation and the effect of debris or precipitates

Pending Publication Date: 2020-09-22
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, due to the decline in the etching performance of the etchant, the generation of debris is increased or the stability of the dissolved metal is insufficient, and debris or precipitates are generated in the metal film over time

Method used

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  • Etching solution composition for silver-containing metal layer
  • Etching solution composition for silver-containing metal layer
  • Etching solution composition for silver-containing metal layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 13 and comparative example 1 to 2

[0073] Each component was mixed with the content (unit: part by weight) in following Table 2, and the etchant composition for metal films containing silver or a silver alloy was prepared.

[0074] 【Table 2】

[0075]

experiment example 1

[0076] Experimental example 1: Etching characteristic evaluation

[0077] In order to evaluate the etching performance of the prepared etching solution composition, a triple film of ITO / Ag / ITO was sequentially formed on a glass plate (100mm×100mm), and the thickness of each layer was and After that, a photolithography process is performed to form patterns.

[0078] At this time, the etching process used a jet etching test equipment (ETCHER (TFT), SEMES), and the temperature of the etching solution composition in the etching process was set to about 35° C. The etching time is set to be performed for 50 to 100 seconds.

[0079] After etching, SEM (S-4800, Hitachi Corporation) was used on the etched cross section of the ITO / Ag / ITO triple film to evaluate the etching characteristics, and the degree of occurrence of bias, lower film damage, debris, and precipitates was observed.

[0080] On the one hand, evaluate the etch rate with Ag single film, specifically, use ellipsomete...

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Abstract

The present invention provides an etching solution composition for a silver-containing metal film, which comprises nitric acid, polysulfonic acid, organic acid and water. The etching solution composition according to the present invention contains nitric acid, polysulfonic acid, organic acid, and water, and for a silver (Ag) or silver alloy metal film used as a reflector or wiring of a display device, damage to the lower film is suppressed, and during formation of fine wirings, it is possible to minimize the occurrence of undesirable deviations and debris or precipitates, and can exhibit excellent etching characteristics.

Description

technical field [0001] The present invention relates to an etchant composition for a silver-containing metal film, and more particularly to an etchant composition capable of suppressing damage, debris and over-etching of a lower film when etching a silver-containing metal film. Background technique [0002] Generally, a display panel includes a display substrate formed with thin film transistors as switching elements for driving pixels. The display substrate includes a plurality of metal patterns, and the metal patterns are mainly formed by photolithography. The photolithography method is a process of forming a photoresist film on a metal film to be etched formed on a substrate, exposing and developing the photoresist film, and forming a photolithographic pattern. , using the photolithographic pattern as an etching resist film and etching the metal film with an etchant, so that the metal film can be patterned. [0003] In the etching process for patterning the metal film, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30C23F1/02
CPCC23F1/30C23F1/02
Inventor 殷熙天金益俊陈闰泰金希泰金世训
Owner ENF TECH
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