Ferroelectric random access memory word line driver, decoder, and related circuit

Abstract

A word line driver may include: a first transistor having a first node at an input and a second node at an input voltage; a second transistor having a first node at the input node, a second node at athird node of the first transistor, and a grounded third node; a third transistor having a first node at the input voltage, a second node at the first internal node, and a third node at the second internal node; a fourth transistor having a first node at an internal node, a second node at a boosted voltage, and a third node at a word line; a fifth transistor having a first node at an internal node, a second node at a word line, and a grounded third node; and a sixth transistor between the word line, the boosted voltage, and the second internal node.

Description

Background technique [0001] Embodiments of the present disclosure relate to decoders. Certain embodiments may more particularly relate to random access memory (RAM) circuits as ferroelectric random access memory (FRAM) word line decoders. [0002] A memory device may consist of circuitry configured to store logic states. These logical states can be stored in volatile or non-volatile fashion. While flash RAM has become a popular volatile choice for bit storage, ferroelectric RAM (FRAM) promises lower power usage, faster write performance, and greater maximum read / write endurance . FRAM is one of several alternatives to flash RAM. Another alternative is dynamic RAM (DRAM). DRAM and FRAM may be different from each other. Similar to DRAM, FRAM relies on a destructive read process, requiring a read-after-write architecture. Unlike DRAM, FRAM is a non-volatile memory technology. Therefore, FRAM has its own unique challenges and problems. [0003] Bits can be stored as logic...

AI Technical Summary

Problems solved by technology

In other words, conventional wordline drivers usually occupy a relatively large area of ​​the chip, and the ratio of transistors to wordlines is relatively high

Also, a large transistor load will increase the size of the bootstrap capacitor used for wordline boost due to the larger capacitive load

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