Semiconductor process equipment

Abstract

The invention provides semiconductor process equipment, which comprises a process chamber, wherein the process chamber is internally provided with a base used for bearing a substrate and a first heatsource assembly used for heating the base, the process chamber is further internally provided with a second heat source assembly, the first heat source assembly is arranged around the second heat source assembly, the second heat source assembly comprises a driving mechanism and a second heat source, and the second heat source assembly is used for heating the base; the driving mechanism is connected with the second heat source and used for driving the second heat source to move so as to adjust the area of the base heated by the second heat source. According to the semiconductor process equipment provided by the invention, the flexibility of controlling the temperature of the base can be improved, so that the temperature uniformity of the base is improved, the resistivity value and the resistivity uniformity of a substrate deposition layer are improved, the service life of a heat source assembly can be prolonged, and the use cost is reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, in particular, to a semiconductor process equipment. Background technique [0002] At present, with the development of the semiconductor industry, among the process indicators of silicon epitaxial equipment, the requirements for the resistivity value and resistivity uniformity of the wafer (Wafer) deposition layer are getting higher and higher. In silicon epitaxial equipment, the heating uniformity of the tray used to carry the wafer in the process will affect the resistivity value and resistivity uniformity of the wafer deposition layer to a certain extent. [0003] In the existing silicon epitaxial equipment, usually a heating module is arranged above and below the tray for carrying the wafer. This kind of heating module includes an annular reflective screen and a plurality of infrared lamps. The plurality of infrared lamps are arranged on the annular reflective screen ...

AI Technical Summary

Problems solved by technology

[0004] However, since the reflection angle of the groove is fixed, there will still be areas with more and less reflected light on the tray, resulting in the tray not being evenly heated across the entire area

Also, since only all inner zone lights and / or all outer zone lights can be adjusted at the same time, it is impossible to adjust the temperature of a single area of ​​the tray that is too hot or too cold, and this will cause the inner zone lights and / or the power of a certain infrared lamp in the outer area lamp reaches full load, which reduces the service life of the infrared lamp and increases the cost of use

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