Semiconductor structure and method of making the same

Abstract

The present application discloses a semiconductor structure and a manufacturing method thereof, the semiconductor structure includes: a substrate; an N-type doped region located in the substrate; a metal structure located on the surface of the substrate and including a middle part and an edge part, the middle part and the The N-type doped region contacts to form a Schottky diode; a first P-type well region is located in the N-type doped region in contact with the edge portion and separates the edge portion from the N-type doped region; and a first P-type well region The contact region is located in the first P-type well region and separated from the edge portion, wherein the doping concentration of the first P-type contact region is higher than that of the first P-type well region, and the doping concentration of the first P-type contact region is higher than that of the first P-type well region. When the region is grounded, the first P-type well region is used to receive the anode voltage of the Schottky diode. The semiconductor structure maintains the low voltage drop and high frequency characteristics of the Schottky diode on the premise of increasing the breakdown voltage of the Schottky diode and reducing the leakage current of the Schottky diode.

Description

technical field [0001] The present application relates to the field of semiconductor device fabrication, and more particularly, to semiconductor structures and methods of fabricating the same. Background technique [0002] Schottky Barrier Diode (SBD) has the advantages of high switching frequency and low forward voltage, and is widely used in electronic circuits. like figure 1 As shown, the SBD in the prior art includes a Schottky junction formed by a metal structure 10 and an N-type semiconductor 20 with a lower doping concentration, wherein a schottky junction formed between the middle portion of the metal structure 10 and the N-type semiconductor 20 The Schottky junction is flat, and the Schottky junction formed between the edge portion of the metal structure 10 and the N-type semiconductor 20 is curved. When a positive voltage is applied to the N-type semiconductor 20 to deplete the N-type semiconductor 20, since the Schottky junction (depletion layer) corresponding t...

AI Technical Summary

Problems solved by technology

Under the condition that N-type semiconductor 20 is depleted by applying a positive voltage to N-type semiconductor 20, since the Schottky junction (depletion layer) corresponding to the edge portion of metal structure 10 has a certain curvature (refer to figure 1 The dotted line in ), which leads to the large electric field here, which in turn causes interband tunneling current, which increases the reverse leakage current of SBD

When the electric field is too large and continues to increase, the SBD will break down early, resulting in a low breakdown voltage of the SBD

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