Method for saving photoresist through dynamic RRC coating on wafer

A technology of photoresist and wafer, which is applied in the direction of optics, optomechanical equipment, photoplate making process of pattern surface, etc., can solve the problems of large consumption of photoresist, low process yield rate, many process defects, etc., and achieve Improve the process yield rate, improve the process quality, and the effect of process quality improvement

Pending Publication Date: 2020-09-29
SHENYANG KINGSEMI CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problems of large consumption of photoresist in the prior art, high cost, many subsequent process defects, and low process yield, the purpose of the present invention is to provide a dynamic RRC coating on the wafer to save photoresist The method, by adopting a specific process method and selecting appropriate process parameters, adding a dynamic RRC coating step before the glue dispensing step, reducing chemical consumption and production process costs, and improving the production process while ensuring the original standard requirements Process quality, while reducing subsequent development defects and improving process yield

Method used

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  • Method for saving photoresist through dynamic RRC coating on wafer
  • Method for saving photoresist through dynamic RRC coating on wafer

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Embodiment 1

[0030] Thin-film technology is used on a 12-inch wafer, using some kind of photoresist, and the coating thickness is 0.2 μm. First, the wafer to be coated is taken out of the cassette, and sent to the cooling unit for cooling at 23°C for 60 seconds to stabilize the wafer temperature; Set the glue coating process formula, before adding RRC, the required photoresist consumption is 10ml, on the basis of the original formula, add a dynamic RRC coating step before the glue dropping step, set the RRC coating time to 5s, and the speed to 30rpm , the consumption required for the supply of the chemical cabinet RRC is 20ml; followed by glue dispensing, the photoresist consumption required at this time is 1.5ml, the film thickness and its uniformity are adjusted by the main speed; the wafer is completed in the glue coating unit After the coating process, it is taken out by the robot, baked on a hot plate at 110°C for 90s, sent to exposure, and then developed. Finally, the wafer completes...

Embodiment 2

[0034] Thin-film technology is used on a 12-inch wafer, using some kind of photoresist, and the coating thickness is 15 μm. First, the wafer to be coated is taken out of the cassette, and sent to the cooling unit for cooling at 23°C for 60 seconds to stabilize the wafer temperature; Set the glue coating process formula, before adding RRC, the required photoresist consumption is 15ml, on the basis of the original formula, add a dynamic RRC coating step before the glue dropping step, set the RRC coating time to 10s, and the speed to 20rpm , the consumption required for the supply of the chemical cabinet RRC is 15ml; followed by dispensing, the photoresist consumption required at this time is 3ml, the film thickness and its uniformity are adjusted by the main rotating speed; the wafer is coated in the glue coating unit After the coating process, it is taken out by the robot, baked on a hot plate at 150°C for 90s, sent to exposure, and then developed. Finally, the wafer completes ...

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Abstract

The invention discloses a method for saving photoresist through dynamic RRC coating on a wafer and belongs to the technical field of semiconductor photoetching. The method has important significance for optimizing a formula, saving the photoresist, reducing the process cost and reducing the development defects. The dynamic RRC coating step is added before the gluing process formula and the glue dripping step, compared with the prior art, the photoresist is saved, process cost is reduced, the process quality is improved on the premise of ensuring the original standard requirements, the subsequent development defects are reduced, and effects of reducing cost and improving the quality are achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography, in particular to a method for saving photoresist by dynamic RRC coating on a wafer. Background technique [0002] With the continuous development and progress of manufacturing semiconductor integrated circuits and device technologies, the semiconductor lithography process is also continuously improved. As the key dimensions of the device become smaller and smaller, the process cost is also increasing, so it becomes more important to reduce the process cost and the amount of photoresist. Reasons include but are not limited to the following points: 1. To produce smaller and higher-density circuits, it is necessary to overlay and coat multiple layers of photoresist on a 12-inch (300mm) wafer, which requires a large amount of photoresist, and The price of each layer of photoresist is relatively expensive, which makes the cost of producing chips higher and higher; 2. During the...

Claims

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Application Information

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IPC IPC(8): G03F7/16
CPCG03F7/162G03F7/168
Inventor孙洪君张晨阳朴勇男蔺伟聪关丽
OwnerSHENYANG KINGSEMI CO LTD