Data reading circuit and storage unit

Abstract

A data reading circuit and a storage unit, the data reading circuit includes a reference voltage generation unit, a pull-down signal generation unit, a sensitive amplification unit, a column decoding unit, and a reference voltage adjustment corresponding to the column decoding unit one by one unit, wherein the reference voltage generation unit is used to receive an inverted chip enable signal, generate a chip enable signal, and generate a reference voltage, and output the reference voltage to the sensitive amplification unit and the reference voltage adjustment unit, Outputting the chip enable signal to the pull-down signal generating unit; the pull-down signal generating unit is used to generate a pull-down signal according to the chip enable signal, and output the pull-down signal to the sensitive amplifying unit and the The reference voltage adjustment unit; the reference voltage adjustment unit is used to adjust the reference voltage to a stable state after the reference voltage drops with the pull-down signal. The above solution can ensure the stability of the reference voltage.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, in particular to a data reading circuit and a storage unit. Background technique [0002] Memory cells are an important part of integrated circuits. For example, a read-only memory unit (Read Only Memory, ROM) is the smallest ROM device for storing information. A ROM unit stores one bit of information, which is expressed as one of two states of "0" and "1". When the ROM cell is not being read, its bit line is low level "0". After reading starts, the bit line is first charged to an intermediate level, and then the bit line is pulled down and discharged through the ROM cell, and the information stored in the ROM cell is judged based on the voltage value on the bit line after the pull-down. [0003] When reading information in a memory cell, a stable reference voltage is required to ensure an appropriate margin for reading "0" and reading "1". However, the amount of stored information...

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Problems solved by technology

However, the amount of stored information is constantly increasing, and the corresponding reference voltage loads are also different

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