Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical mechanical grinding method

A grinding method and chemical-mechanical technology, applied in the field of grinding, can solve the problems of excessive grinding of semiconductor components and the decline in the yield of semiconductor components, and achieve the effects of improving yield and reliability, improving uniformity and high grinding precision

Inactive Publication Date: 2020-10-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the grinding process using the abrasive slurry with higher removal efficiency, it is easy to form excessive grinding on the edge of the semiconductor element, thereby causing the problem of a decrease in the yield of the semiconductor element

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical grinding method
  • Chemical mechanical grinding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0018] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Shore hardnessaaaaaaaaaa
Login to View More

Abstract

The invention provides a chemical mechanical grinding method. The method comprises the steps that a to-be- ground wafer is subjected to primary grinding through a wool felt grinding pad so as to eliminate a high segment difference of the to-be-ground wafer; and secondary grinding is carried out on the wafer obtained after primary grinding through a polyurethane grinding pad to complete planarization of the wafer. The chemical mechanical grinding method can maintain the uniformity of the surface of the semiconductor wafer under a large grinding amount.

Description

technical field [0001] The invention relates to the technical field of grinding, in particular to a chemical mechanical grinding method. Background technique [0002] On a semiconductor element with a high level difference, in order to achieve a prescribed planarization process, it is necessary to perform a large amount of polishing on the semiconductor element. At present, as a common means to solve this problem, the grinding slurry with higher removal efficiency is used in the grinding process. However, during the grinding process using the grinding slurry with higher removal efficiency, the edge of the semiconductor element is easily over-grinded, thereby causing the problem of a decrease in the yield of the semiconductor element. Contents of the invention [0003] The chemical mechanical grinding method provided by the invention can maintain the uniformity of the surface of the semiconductor wafer under a large grinding amount. [0004] In a first aspect, the present...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B37/04B24B37/24B24B27/00
CPCB24B37/042B24B37/24B24B27/0023B24B27/0076
Inventor 金昶圭张月杨涛卢一泓刘青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com