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Semiconductor process equipment and magnetron mechanism thereof

A technology of process equipment and magnetron, which is applied in the direction of magnetron, semiconductor/solid-state device manufacturing, metal material coating technology, etc., and can solve the problems of high difficulty in realization and control

Active Publication Date: 2020-10-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the existing methods, this application proposes a semiconductor process equipment and its magnetron mechanism to solve the technical problems of the existing technology that are difficult to control and difficult to implement

Method used

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  • Semiconductor process equipment and magnetron mechanism thereof
  • Semiconductor process equipment and magnetron mechanism thereof
  • Semiconductor process equipment and magnetron mechanism thereof

Examples

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Embodiment Construction

[0026] The present application is described in detail below, and examples of embodiments of the present application are shown in the drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Also, detailed descriptions of known technologies will be omitted if they are not necessary to illustrate the features of the present application. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.

[0027] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be ...

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Abstract

The embodiment of the invention provides semiconductor process equipment and a magnetron mechanism thereof. The magnetron mechanism comprises a back plate assembly, movable magnetic poles and fixed magnetic poles; the back plate assembly comprises a first back plate and a second back plate, and the second back plate can move relative to the first back plate; the plurality of fixed magnetic poles are arranged on the bottom surface of the first back plate, and the plurality of movable magnetic poles are arranged on the bottom surface of the second back plate; and when the second back plate movesto a preset position, at least one movable magnetic pole in the plurality of movable magnetic poles and at least one fixed magnetic pole in the plurality of fixed magnetic poles form a magnetron in aclosed state, and the other movable magnetic poles and the fixed magnetic poles are in a non-closed state. According to the embodiment of the semiconductor process equipment and the magnetron mechanism thereof, alternate starting of the plurality of magnetrons is realized, rapid switching among a plurality of processes is further realized, and the phenomenon that the plurality of magnetrons fightfor starting is avoided, so that the process stability is further improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, the present application relates to a semiconductor process equipment and a magnetron mechanism thereof. Background technique [0002] Currently, sputtering refers to the phenomenon that energetic particles (such as argon ions) bombard a solid surface, causing various particles on the solid surface, such as atoms, molecules or clusters, to escape from the solid surface. In the magnetron sputtering equipment, the plasma is generated in the process chamber, and the positive ions of the plasma are attracted by the negative electricity of the cathode, bombard the target in the process chamber, knock out the atoms of the target and deposit them on the substrate. In the case of non-reactive sputtering, the gas is an inert gas such as argon. In reactive sputtering, reactive gases and inert gases are used together. Magnetron sputtering equipment is widely...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35H01J25/50H01L21/203
CPCH01L21/203C23C14/35H01J25/50
Inventor 杨玉杰王世如赵康宁
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD