Plasma processing method and plasma processing device

A technology of plasma and treatment method, applied in the field of plasma treatment and plasma treatment device, can solve the problems of low ion energy and the like

Pending Publication Date: 2020-10-27
TOKYO ELECTRON LTD
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  • Application Information

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Problems solved by technology

On the other hand, if a bias high frequency power with a low power level is supplied to the lower electrode, the energy of the ions striking the substrate will be lower

Method used

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  • Plasma processing method and plasma processing device
  • Plasma processing method and plasma processing device
  • Plasma processing method and plasma processing device

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Embodiment Construction

[0037] Various exemplary embodiments will be described below.

[0038] According to an exemplary embodiment, a plasma processing method is provided. The plasma processing method includes the steps of performing a first plasma treatment in a chamber during a first period; and performing a second plasma in a chamber after the first period or in a second period following the first period. processing steps. In the step of performing the first plasma treatment and the step of performing the second plasma treatment, the first high-frequency power is continuously supplied to the lower electrode of the substrate support table. The first high-frequency power has a first frequency. A substrate support table is disposed within the chamber. The second high-frequency power is supplied as pulsed high-frequency power during the first partial period of the first period and the second partial period of the second period. The second high-frequency power is high-frequency power having a seco...

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Abstract

According to a plasma processing method of an exemplary embodiment, first plasma processing is performed in a first period, and second plasma processing is performed in a second period following the first period. In the first period and the second period, a first high-frequency power for biasing is supplied to a lower electrode successively. A second high-frequency power for generating plasma maybe supplied as a pulsed high-frequency power in a first partial period in each period of the first high-frequency power in the first period. The second high-frequency power may be supplied as a pulsedhigh-frequency power in a second partial period in each period of the first high-frequency power in the second period.

Description

technical field [0001] Exemplary embodiments of the present disclosure relate to a plasma processing method and a plasma processing apparatus. Background technique [0002] In the manufacture of electronic devices, plasma processing is performed using a plasma processing apparatus. A plasma processing apparatus includes a chamber and a substrate support table. A substrate support table includes a lower electrode and is disposed within the chamber. In plasma processing, high-frequency power is supplied to excite gas in a chamber to generate plasma from the gas. [0003] During plasma processing, another high frequency power may be supplied to the lower electrode. The frequency of the other high-frequency power is lower than that of the high-frequency power used to generate plasma. That is, the other high-frequency power is bias high-frequency power. Typically, bias high-frequency power is used to adjust the energy of ions striking a substrate placed on a substrate suppor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H05H1/46
CPCH01J37/32165H01J37/32706H01J37/32577H01L21/31116H01L21/32H01J37/32174H01J37/32146H01L21/32136H01J2237/3341H01J37/32183H01J2237/334H01L21/3065H05H1/46
Inventor 道菅隆久保田绅治舆水地盐
Owner TOKYO ELECTRON LTD
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