Surface optimization method of heterogeneous integrated piezoelectric single crystal thin film substrate
A technology of piezoelectric single crystal and optimization method, applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve problems affecting the uniformity of single crystal film thickness, etc., to improve surface flatness , to ensure the effect of uniformity
Active Publication Date: 2020-10-30
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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Problems solved by technology
[0005] The technical problem to be solved by the present invention is that the existing polishing method for the heterogeneously integrated piezoelectric single crystal thin film substrate will affect the thickness uniformity of the single crystal thin film
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[0030] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.
[0031] Reference herein to "one embodiment" or "an embodiment" refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "top", "bottom" etc. is based on the orientation or positional relationship shown in the drawings, and is only for It ...
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Abstract
The invention relates to the technical field of material preparation, in particular to a surface optimization method of a heterogeneous integrated piezoelectric single crystal thin film substrate. Themethod comprises the following steps of obtaining a heterogeneous integrated piezoelectric single crystal thin film substrate to be optimized, wherein the piezoelectric single crystal thin film substrate comprises a support layer and a piezoelectric single crystal thin film layer; performing corrosion treatment on the piezoelectric single crystal thin film substrate to obtain a first product, wherein a corrosion layer is formed on the surface of the piezoelectric single crystal thin film layer of the first product; and polishing the first product to obtain a second product. The uniform corrosion layer with a certain thickness can be formed on the surface of a piezoelectric single crystal thin film subjected to corrosion treatment, then the corrosion layer can be removed through low-back-pressure chemical mechanical polishing, and the optimization of the surface of the piezoelectric single crystal thin film is achieved. According to the surface optimization method provided by the embodiment of the invention, the surface flatness of the heterogeneous integrated piezoelectric single crystal thin film substrate and the lattice quality of the near-surface area of the film can be improved, and meanwhile, the thickness uniformity of the piezoelectric single crystal thin film can be ensured.
Description
technical field [0001] The invention relates to the technical field of material preparation, in particular to a method for optimizing the surface of a heterogeneous integrated piezoelectric single crystal thin film substrate. Background technique [0002] Lithium tantalate (LiTaO3) has excellent piezoelectric and pyroelectric properties, and is widely used in the manufacture of radio frequency front-end filters and pyroelectric detectors. Lithium tantalate belongs to the trigonal crystal system, 3m point group, and R3c space group. Due to the anisotropy of the lattice structure, it also reflects different cut types in application, and has different application fields. For example, in the field of radio frequency front-end devices, There are mainly 38-degree Y-X, 42-degree Y-X, 50-degree Y-X and other cut lithium tantalate single crystal wafers, and the pyroelectric field is mainly Z-cut lithium tantalate. With the popularization of fifth-generation mobile communications and...
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Login to View More IPC IPC(8): H01L41/332H01L41/337
CPCH10N30/082H10N30/086
Inventor 欧欣鄢有泉
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD