Unlock instant, AI-driven research and patent intelligence for your innovation.

Forward-mounted integrated unit diode chip capable of uniformly emitting light

A uniform light-emitting, integrated unit technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of LED light efficiency, heat dissipation and stability limitations

Active Publication Date: 2020-11-10
纳微朗科技(深圳)有限公司
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, LED light efficiency, heat dissipation and stability under high current will be severely limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Forward-mounted integrated unit diode chip capable of uniformly emitting light
  • Forward-mounted integrated unit diode chip capable of uniformly emitting light
  • Forward-mounted integrated unit diode chip capable of uniformly emitting light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] This embodiment provides a uniformly luminescent positively mounted integrated unit diode chip, such as image 3 As shown, it includes: a first conductivity type electrode 1, a first conductivity type pad 11, a second conductivity type pad 12, a first conductivity type electrode line 13, a second conductivity type electrode line 14, a diode mesa structure 15, a diode The mesa structure includes 56 square diode units 16 in 6 rows and trenches 17, and the trench structure is located between the diode units. The diode units are uniformly distributed in the mesa structure, and the length of the diode units along the x-axis direction is 10 nanometers to 100 nanometers. Each row of diode units has different or equal lengths along the x-axis direction starting from the second conductive pad. When they are not equal, define their lengths as L 0 , L 1 , L 2 , L 3 …L n , where the diode cell width satisfies L 0 >L 1 >L 2 >L 3 >…>L n .

[0053] In some preferred embodi...

Embodiment 2

[0058] This embodiment provides a uniformly luminescent positively mounted integrated unit diode chip, such as Figure 4 As shown, it includes: a first conductivity type electrode 1, a first conductivity type pad 11, a second conductivity type pad 12, a first conductivity type electrode line 13, a second conductivity type electrode line 14, a diode mesa structure 15, a diode The mesa structure includes 16 squares of equal size in 6 rows, 40 two types of rectangular diode units with equal length and different width and trench structure 17, and the trench structure is located between the diode units. The size of the diode units in each row is equal, and the diode units are distributed in the mesa structure, and the width of each diode unit along the y-axis direction is 10 nanometers to 100 nanometers. The diode units start from the middle position and have different or equal widths along the y-axis direction. When not equal, define its width from the middle to both sides as W ...

Embodiment 3

[0062] This embodiment provides a uniformly luminescent positively mounted integrated unit diode chip, such as Figure 8 As shown, it includes: a first conductivity type electrode 1, a first conductivity type pad 11, a second conductivity type pad 12, a first conductivity type electrode line 13, a second conductivity type electrode line 14, a diode mesa structure 15, a diode cell 16 and trench 17 . The diode mesa structure includes 6 rows of 102 triangular diode units 16 of equal size and uniform distribution, and the length of the diode units along the x-axis direction is 40 microns. The diode mesa structure adopts a triangular arrangement, and the size of the mesa structure is smaller than the diffusion length of the current injection. The diode units are triangular in shape and distributed according to a uniform symmetrical arrangement.

[0063] In some preferred embodiments, the diode unit has a width of 10 nanometers along the y-axis direction, and in other preferred em...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a forward-mounted integrated unit diode chip capable of emitting light uniformly. The forward-mounted integrated unit diode chip comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located between the first conductive type electrode and the second conductive type electrode. The diode mesa structure comprises n diode units, and the n diode units are different in length in the x-axis direction or different in width in the y-axis direction. The plane position function of the n diode units relative to the mesa structureis linear or nonlinear, wherein n is greater than or equal to 2. Through the non-uniform mesa structure design, a high-quality LED light source with super-uniform current distribution, heat distribution, wavelength distribution and narrow half height is obtained, and the technical problem that a diode structure in the prior art has great limitations in three important parameters of lumen efficiency, lumen density output and lumen cost, is solved. According to the present invention, the lumen output of a unit area chip is improved, and the lumen cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] Conventional front-mounted integrated unit diode chips have uneven current diffusion, resulting in loss of luminous efficiency. The heat dissipation of the diode unit diode chip under the existing structure is realized through the sapphire substrate, and the heat dissipation is poor, thus affecting the efficiency and stability of the unit diode chip. Therefore, the main application field of front-mounted light-emitting diode unit diode chips is the small and medium power unit diode chip market below 0.5 watts, and it is impossible to provide products with high lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in three important parameters: lumen efficiency, lumen density output, and lumen cost. Currentl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/075H01L33/48H01L33/62
CPCH01L25/0753H01L33/483H01L33/62
Inventor 蒋振宇闫春辉
Owner 纳微朗科技(深圳)有限公司