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Preparation method of a novel dual-color ingaas infrared focal plane detector

An infrared focal plane and detector technology, applied in semiconductor devices, electric solid state devices, radiation control devices, etc., can solve the problem of easy residual N-type InP metal contact layer and other problems, and achieve the effect of improving visible light absorption performance and increasing absorption rate

Active Publication Date: 2022-06-28
山西国惠光电科技有限公司
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Problems solved by technology

[0003] In order to solve the problem that the N-type InP metal contact layer is easily left in the pixel area of ​​the existing two-color InGaAs infrared focal plane detector, the present invention provides a preparation method of a novel two-color InGaAs infrared focal plane detector

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  • Preparation method of a novel dual-color ingaas infrared focal plane detector
  • Preparation method of a novel dual-color ingaas infrared focal plane detector
  • Preparation method of a novel dual-color ingaas infrared focal plane detector

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Embodiment Construction

[0026] A preparation method of a novel dual-color InGaAs infrared focal plane detector, the method is realized by the following steps:

[0027] a. Select the InGaAs photodiode array and the readout circuit 2, and perform flip-chip interconnection between the InGaAs photodiode array and the readout circuit 2;

[0028] b. First thin the InP substrate 101 of the InGaAs photodiode array, and then use the wet method to remove the remaining InP substrate 101, thereby exposing the InGaAs etch stop layer 102 of the InGaAs photodiode array;

[0029] c. removing the InGaAs etch stop layer 102 by a wet method, thereby exposing the N-type InP metal contact layer 103 of the InGaAs photodiode array;

[0030] d. Coating the positive photoresist layer 3 on the N-type InP metal contact layer 103;

[0031] e. Etching on the positive photoresist layer 3 to form a first window that penetrates up and down, thereby exposing the N-type InP metal contact layer 103 in the pixel region;

[0032] f. W...

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Abstract

The invention relates to a two-color InGaAs infrared focal plane detector, in particular to a preparation method of a novel two-color InGaAs infrared focal plane detector. The invention solves the problem that the N-type InP metal contact layer is easily left in the pixel area of ​​the existing two-color InGaAs infrared focal plane detector. A method for preparing a new type of two-color InGaAs infrared focal plane detector, which is realized by the following steps: a. Flip-chip interconnection of the InGaAs photodiode array and the readout circuit; b. First, the InP substrate of the InGaAs photodiode array The bottom is thinned, and then the remaining InP substrate is removed by wet method; c. Remove the InGaAs etch stop layer; d. Coat the positive photoresist layer; e. Etch to form the first window through up and down; f. Wet Etching to form a second window penetrating up and down; g. removing the remaining positive photoresist layer; h. depositing an anti-reflection film. The invention is applicable to the preparation of two-color InGaAs infrared focal plane detectors.

Description

technical field [0001] The invention relates to a dual-color InGaAs infrared focal plane detector, in particular to a preparation method of a novel dual-color InGaAs infrared focal plane detector. Background technique [0002] Two-color InGaAs infrared focal plane detectors are widely used in aviation safety, biomedicine, Camouflage recognition, infrared night vision and other fields. Under the existing technical conditions, due to the limitation of the preparation method of the dual-color InGaAs infrared focal plane detector, the N-type InP metal contact layer is likely to remain in the pixel area. In practical applications, the residual N-type InP metal contact layer will absorb part of the visible light, resulting in In 0.53 Ga 0.47 The absorption rate of the As absorption layer to visible light decreases, thus resulting in poor visible light absorption performance of the dual-color InGaAs infrared focal plane detector. Based on this, it is necessary to invent a new m...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146G01V8/10
CPCH01L27/14683H01L27/14649G01V8/10
Inventor 张家鑫史衍丽石慧郭金萍贾凯凯王伟刘璐郭文姬高炜刘建林徐文艾
Owner 山西国惠光电科技有限公司