Semiconductor device and method for manufacturing semiconductor device

Abstract

The invention discloses a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device comprises: a semiconductor substrate; a bottom electrode metal layer located in the semiconductor substrate and a top electrode metal layer located on the semiconductor substrate; a resistive switch layer located between the bottom electrode metal layer and a top electrode metal layer, the resistive switch layer having a variable resistance; a first oxygen-grabbing layer located between the bottom electrode metal layer and the top electrode metal layer, The first oxygen-grabbing layer is located on the resistive switch layer; the second oxygen-grabbing layer is located in the bottom electrode metal layer, the semiconductor substrate, the bottom electrode metal layer and the second oxygen-grabbing layer The upper surface is even, and the resistive switch layer covers the semiconductor substrate, the bottom electrode metal layer and the second oxygen-grabbing layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method of the semiconductor device. Background technique [0002] As a new type of non-volatile memory, RRAM (Resistive Random Access Memory) has the advantages of simple structure, fast working speed, low power consumption and stable information, and is a strong competitor of the next generation of non-volatile memory. one. [0003] figure 1 It is a structural schematic diagram of an existing resistive variable memory, which includes a bottom electrode metal layer 104, a resistive variable layer 108, an oxygen-grabbing layer 110, and a top electrode metal layer 106, which are sequentially stacked from bottom to top. The resistive layer 108 of resistive effect undergoes mutual conversion between resistance states (high resistance state and low resistance state) under the action of an applied voltage, forming binary information s...

AI Technical Summary

Problems solved by technology

Since this resistive variable structure is a planar structure, the position of the area where the conductive filaments are formed in the resistive variable layer cannot be predicted. The conductive filaments may be formed on both sides of the resistive variable layer or in the middle of the resistive variable layer. area, which reduces the uniformity of the resistance of the resistive memory, thereby reducing the reliability of the resistive memory, hindering the large-scale integration and practical application of the resistive memory

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