Threshold voltage extraction method and device of semiconductor device

Abstract

The invention discloses a threshold voltage extraction method and device for a semiconductor device, which are applied to the field of semiconductor modeling and comprise the following steps: measuring to obtain an IdVg curve of a target SOI device; determining a first tangent line of a first transconductance maximum voltage position and a second tangent line of a second transconductance maximum voltage position on the IdVg curve; and determining an intersection point position voltage value of the first tangent line and the second tangent line, and determining the positive gate threshold voltage of the target SOI device according to the intersection point position voltage value. According to the invention, the positive gate threshold voltage closer to a real value can be extracted.

Description

technical field [0001] The invention relates to the field of semiconductor modeling, in particular to a method and device for extracting a threshold voltage of a semiconductor device. Background technique [0002] For fully depleted SOI (Silicon-On-Insulator, silicon on insulating substrate) and other devices, when the buried oxide layer accumulates positive charges in the irradiation environment or artificially applies a positive voltage to the substrate, the back gate of the device The channel may be turned on. When the back gate open current is included in the leakage current, it will interfere with the calculation of the positive gate threshold voltage, resulting in a large difference between the extracted positive gate threshold voltage and the real value. Contents of the invention [0003] In view of the above-mentioned problems in the prior art, embodiments of the present invention provide a method and device for extracting a threshold voltage of a semiconductor dev...

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Problems solved by technology

[0002] For fully depleted SOI (Silicon-On-Insulator, silicon on insulating substrate) and other devices, when the buried oxide layer accumulates positive charges in the irradiation environment or artificially applies a positive voltage to the substrate, the back gate of the device The channel may be turned on. When the back gate open current is included in the leakage current, it will interfere with the calculation of the positive gate threshold voltage, resulting in a large difference between the extracted positive gate threshold voltage and the real value.

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