Stress applying device for high-temperature oxidation process

Abstract

The invention discloses a stress applying device for a high-temperature oxidation process. The device comprises a base, a wedge block, a single-shaft wide-interval straight rib pressing plate, a single-shaft narrow-interval straight rib pressing plate, a double-shaft large-diameter round rib pressing plate and a double-shaft small-diameter round rib pressing plate, and the single-shaft wide-interval straight rib pressing plate, a semiconductor substrate, the single-shaft narrow-interval straight rib pressing plate and the wedge block are stacked in the base to form a single-shaft tension / compression stress applying device; and the double-shaft large-diameter circular rib pressing plate, the semiconductor substrate, the double-shaft small-diameter circular rib pressing plate and the wedge block are stacked in the base to form a double-shaft tension / compression stress applying device. The device of the invention can be used in a high-temperature oxidation environment, and pollution of metal to the device can be avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits and its manufacture, and in particular relates to a stress applying device used in a high-temperature oxidation process. Background technique [0002] The continuous reduction of transistor feature size has always been the main method to increase the integration and performance of integrated circuits, and the strained silicon and germanium channel technology can significantly improve the carrier mobility and device drive current, and it is compatible with the mainstream CMOS of current microelectronics. Process compatibility has gained extensive research worldwide in recent years. Strain technology introduces stress into the device, uses stress to change the energy band structure of the device material, and affects the carrier mobility of the material from the perspective of energy band. The original strained silicon technology uses SiGe epitaxial materials to make SiGe ...

AI Technical Summary

Problems solved by technology

The original strained silicon technology uses SiGe epitaxial materials to make SiGe virtual substrates, and obtains tensile strain on the entire substrate surface through lattice constant mismatch to improve the mobility of channel carriers, but this method is compatible with traditional CMOS Not good enough and expensive, and due to the introduction of new Ge elements, whether there are other effects on the device is unknown

In addition, this method can only obtain a single tensile strain, which greatly limits the research methods

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