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Semiconductor discharge tube and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of short service life and high instability

Pending Publication Date: 2020-12-25
捷捷半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a semiconductor discharge tube and its manufacturing method to solve the problems of short service life and high instability of gas discharge tubes in the prior art

Method used

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  • Semiconductor discharge tube and manufacturing method thereof
  • Semiconductor discharge tube and manufacturing method thereof
  • Semiconductor discharge tube and manufacturing method thereof

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Embodiment Construction

[0026] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0027] Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art w...

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Abstract

The invention provides a semiconductor discharge tube and a manufacturing method thereof, and relates to the technical field of semiconductor power devices. The semiconductor discharge tube comprisesan N type substrate, a first P type short base region, a second P type short base region, a first P type heavily doped region, a second P type heavily doped region, a third P type heavily doped region, a fourth P type heavily doped region, a first N type emitter region, a second N type emitter region, a first electrode, a second electrode and an insulating layer. The semiconductor discharge tube and the manufacturing method thereof have the advantages of being small in voltage discreteness, long in service life and low in residual voltage.

Description

technical field [0001] The present application relates to the technical field of semiconductor power devices, in particular, to a semiconductor discharge tube and a manufacturing method thereof. Background technique [0002] At present, the solution of gas discharge tube in series with varistor is commonly used in the market for AC power surge protection or L / N to PE insulation withstand voltage protection. Because of the high insulation withstand voltage, the voltage selection of the gas discharge tube is often above 1000V, up to 3000V. [0003] Gas discharge tubes are usually hermetically sealed with ceramic materials and filled with inert gas. The inert gas in the tube shell is easy to leak, so the voltage dispersion of the gas discharge tube is relatively large, the service life is short, and the residual voltage is high. [0004] To sum up, the gas discharge tubes in the prior art have the problems of short service life and high instability. Contents of the inventio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/747H01L29/06H01L21/332
CPCH01L29/0607H01L29/0649H01L29/0657H01L29/0684H01L29/66386H01L29/747
Inventor 朱明张超欧阳潇
Owner 捷捷半导体有限公司
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