Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma reactor with a deposition shield plate

A plasma and reactor technology, which is applied in plasma, ion implantation plating, semiconductor/solid-state device manufacturing, etc., can solve problems such as adverse effects of reactor work

Inactive Publication Date: 2003-09-24
TEGAL CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This deposition of material, caused by material sputtering and other causes, adversely affects the operation of the reactor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma reactor with a deposition shield plate
  • Plasma reactor with a deposition shield plate
  • Plasma reactor with a deposition shield plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] Figure 1a , 1b and 1c represent the plasma reactor 20 of the present invention. The plasma reactor of this embodiment is an inductively coupled plasma reactor. It should be understood that the spirit of the present invention can also be implemented with other types of reactors, such as: ECR (electron cyclotron resonance), Helicon and other ICP (inductively coupled plasma) reactors and capacitively coupled reactors. Thus, the present invention is applicable to a wide variety of reactors capable of performing a variety of tasks and depositing material sputtered from a wafer surface onto other surfaces (eg, energy transfer windows). The reactor 20 of this embodiment is used for etching. The reactor 20 includes a housing 22 and a reaction chamber or etching chamber 24 .

[0060] Wafer 26 is placed on a chuck with bottom electrode 28 . The etching chamber 24 also includes a side peripheral electrode 30 which may be grounded or, due to the action of the plasma generated i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A reactor (20) including a block that prevents material sputtered from a wafer (26) along a line of sight from flying toward and depositing on an electrode (32) or reacting the electrode (32) with the The shielding plate (50) on the window (38) connected to the reaction chamber of the device (20).

Description

[0001] This case is a CIP application of US Patent Application Serial No. 08 / 985,730, filed December 5, 1997, entitled "Plasma Reactor with Deposition Shield." technical field [0002] The present invention relates to a semiconductor processing reactor, and more particularly, to a reactor in which material is sputtered from a wafer to be processed. Background technique [0003] In semiconductor fabrication processes, including but not limited to etching processes, material has a tendency to be sputtered from the wafer and deposited on various surfaces of the reactor, including but not limited to cooled surfaces, such as the walls of the reactor. Typically, a first electrode in the shape of an induction coil of an inductively coupled plasma reactor is connected to the chamber of the reactor through a window, usually made of quartz. In this configuration, material sputtered from the wafer and traveling in a direct line of sight can impact and accumulate on various surfaces of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/00H01L21/302C23C14/56C23F1/02H01J37/32H01L21/00H01L21/3065H05H1/00
CPCC23C14/564H01J37/32623H01J37/32633Y10S156/916H01J37/32119
Inventor 斯蒂芬·P·德奥尼拉斯罗伯特·A·迪蒂齐奥
Owner TEGAL CORP