Power amplifier circuit
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MURATA MFG CO LTD
- Publication Date
- 2021-01-12
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Abstract
Description
technical field
[0001] The invention relates to a power amplifier circuit. Background technique
[0002] In communication using a radio frequency (Radio Frequency: RF, radio frequency) signal of a mobile body such as a mobile phone, a power amplifier circuit is used to amplify the RF signal. Patent Document 1 discloses a semiconductor device provided with a protection circuit for preventing breakdown of the amplifier when an excessive voltage exceeding the allowable voltage is applied to the amplifier of the power amplifier circuit. By providing the protection circuit, it is possible to protect the circuit when an excessive voltage is applied from outside the power amplifier circuit.
[0003] prior art literature
[0004] patent documents
[0005] Patent Document 1: Japanese Patent Laid-Open No. 2018-142688
[0006] In a power amplifier circuit, when multi-stage transistors are used for amplification, a higher voltage is applied to the amplifier in the subsequent stage t...