Thermal annealing processing method and device for preventing wafer from warping

Abstract

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a thermal annealing processing method and device for preventing a wafer from warping. The method comprises the steps that a target wafer is sequentially divided into n closed heating areas from the circle center to the outer edge position, and n is a positive integer; the n heating areas are heated according to the corresponding heating conditions, so that the corresponding temperatures of the n heating areas are gradually decreased from the circle center of the target wafer to theouter edge of the target wafer, and the thermal stress of the target wafer in the rapid thermal annealing process extends from the center of the target wafer to the edge of the target wafer. The device comprises a working cavity, a plurality of target wafers sequentially enter the working cavity of the thermal annealing treatment device, and the thermal annealing treatment method for preventing the wafers from warping can solve the problems that in the related technology, in the rapid thermal annealing process, the edges of the wafers are thermally expanded due to overheating, stress on the wafers is compressed from the edges to the center, therefore, the whole wafer is concave and deformed.

Description

Technical field[0001]This application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a thermal annealing method and device for preventing wafer warpage.Background technique[0002]Rapid thermal annealing is a conventional technical means in semiconductor processing technology, which is used to activate doping elements in semiconductor materials and restore the amorphous structure caused by ion implantation to a complete lattice structure.[0003]In the related art, rapid thermal annealing is to rapidly heat the wafer to a temperature of about 1000K to 1500K in a working chamber, and after the wafer reaches this temperature, it will be held for several seconds, and then quenching is completed.[0004]However, in the rapid annealing process of the related technology, the rapid heating rate of each area of ​​the wafer is not uniform, which makes the temperature field distribution uneven, which leads to uneven heating and deformation of the ...

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Problems solved by technology

[0005] This application provides a thermal annealing treatment method and device for preventing wafer warpage, which can solve the problem that in the related art, during the rapid thermal annealing process, the edge of the wafer is thermally expanded due to overheating, so that the stress on the wafer is compressed from the edge to the center. , so that the wafer as a whole presents a problem of concave deformation

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