Sensing techniques for a memory cell

Abstract

The invention relates to sensing techniques for a memory cell. Methods, systems, and devices for sensing techniques for a memory cell are described to enable a latch to sense a logic state of a memorycell. A transistor coupled with a memory cell may boost a first voltage associated with the memory cell to a second voltage via one or more parasitic capacitances of the transistor. The second voltage may be developed on a first node of a sense component, and the second voltage may be shifted to a third voltage at a first node of the sense component by applying a voltage to a shift node coupled with a capacitor of the sense component. Similar boosting and shifting operations may be performed to develop a reference voltage on a second node of the sense component. The sense component may sensethe state of the memory cell by comparing with the reference voltage.

Description

[0001] cross reference [0002] This patent application asserts Ser. No. 16 / 515,666, entitled SENSING TECHNIQUES FOR A MEMORY CELL, filed July 18, 2019, by Di Vincenzo et al. Priority of U.S. Patent Application No. , assigned to its assignee and expressly incorporated herein by reference in its entirety. technical field [0003] The technical field relates to sensing techniques for memory cells. Background technique [0004] The following generally relates to systems including at least one memory device, and more particularly, to sensing techniques for memory cells. [0005] Memory devices are widely used to store information in various electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming the different states of the memory device. For example, binary devices mostly store one of two states typically represented by a logical one or a logical zero. In other devices, more than two...

AI Technical Summary

Problems solved by technology

Some components included in a memory device can increase the size or footprint of the memory device, introducing additional cost and manufacturing complexity

Images