Copper interconnection structure manufacturing method

Abstract

The invention relates to a semiconductor copper interconnection manufacturing process, in particular to a copper interconnection structure manufacturing method. The copper interconnection structure manufacturing method comprises the following steps of: providing an interconnection layer which is patterned with interconnection hole slots in advance; forming a copper seed layer on the inner walls ofthe interconnection hole slots; carrying out pre-annealing on the copper seed layer for 20 seconds to 40 seconds under the condition of a temperature of 180DEG C to 250DEG C, enabling copper latticesof the copper seed layers to grow, and compensating gaps among the copper lattices of the copper seed layers, thus forming a continuous copper seed layer; forming a copper interconnection structure filling the interconnection hole slots on the copper seed layers through a copper electroplating process; annealing the copper interconnection structure; and planarizing the surface of the copper interconnection structure through a grinding process. According to the invention, the problem that the copper interconnection structure is unreliable due to instability of the structure of the copper seedlayers formed by growth of the PVD method in the prior art can be solved.

Description

technical field [0001] The present application relates to a semiconductor copper interconnect manufacturing process, in particular to a copper interconnect structure manufacturing method. Background technique [0002] Copper interconnection technology is widely used in the manufacture of semiconductor integrated circuits. image 3 A copper interconnect structure formed in the related art is shown. Usually, form image 3 In the copper interconnection structure shown, an interconnection hole 110 is preliminarily opened in the interconnection layer 100 to form the copper interconnection structure, and a barrier layer 102 and a barrier layer 102 are sequentially grown on the sidewall of the interconnection hole 110 by PVD. After the copper seed layer 103 is left standing in the air for 0.5 hours to 4 hours, the electroplating process of the copper interconnection structure 103 can be performed to improve the adhesion between the copper interconnection structure 103 and the inter...

AI Technical Summary

Problems solved by technology

[0004] The present application provides a method for manufacturing a copper interconnection structure, which can solve the problem in the related art that the structure of the copper seed layer formed by PVD growth is unstable, resulting in an unreliable copper interconnection structure

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