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Double-acceptor co-doping method for growing p-(K-N):ZnO thin film

A co-doping and acceptor technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., to achieve the effect of increased concentration, controllable doping concentration, and good electrical properties

Inactive Publication Date: 2012-06-13
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The magnetron sputtering method has the advantages of high film formation efficiency, easy to maintain consistent target film composition, simple and convenient operation, and compatibility with surface integration processes. At present, there is no K-N co-doped by this method. p -ZnO film growth

Method used

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  • Double-acceptor co-doping method for growing p-(K-N):ZnO thin film
  • Double-acceptor co-doping method for growing p-(K-N):ZnO thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0024] 1000 grams of ZnO powder with a purity of 99.99% and 1 gram of a purity of 99.99% K 2 O powder was ball-milled and mixed in a ball mill for 12 hours, and then pre-fired at 600°C for 6 hours. After grinding into a powder, 30 grams of polyvinyl alcohol with a purity of 99.99% was added to form a precursor powder;

[0025] Press the precursor powder into a disc with a diameter of 76.2 mm and a thickness of 5 mm, and sinter at 1200 ° C for 4 hours to obtain a K:ZnO disc, which is used as a target for magnetron sputtering;

[0026] Put the prepared K:ZnO target material and the single crystal sapphire substrate after cleaning the surface into the vacuum chamber of the radio frequency magnetron sputtering device respectively, the distance between the target material and the substrate is 5cm, and the The substrate is completely blocked, the vacuum chamber is evacuated, and the substrate is heated to 450°C at the same time;

[0027] When the vacuum degree in the vacuum chamber...

Embodiment 2

[0032] 100 grams of ZnO powder with a purity of 99.995% and 1 gram of a purity of 99.995% K 2 O powder was ball-milled and mixed in a ball mill for 8 hours, and then pre-fired at 1000°C for 2 hours. After grinding into a powder, 5 grams of polyvinyl alcohol with a purity of 99.995% was added to form a precursor powder;

[0033] Press the precursor powder into a disc with a diameter of 25.4mm and a thickness of 3mm, and sinter at 1500°C for 1 hour to obtain a K:ZnO disc, which is used as a target for magnetron sputtering;

[0034] Put the prepared K:ZnO target material and the single crystal sapphire substrate after cleaning the surface into the vacuum chamber of the radio frequency magnetron sputtering device respectively, the distance between the target material and the substrate is 4cm, and the The substrate is completely blocked, the vacuum chamber is evacuated, and the substrate is heated to 650°C at the same time;

[0035] When the vacuum degree in the vacuum chamber rea...

Embodiment 3

[0040]1000 grams of ZnO powder with a purity of 99.998% and 5 grams of a purity of 99.998% K 2 O powder was ball milled and mixed in a ball mill for 15 hours, then pre-fired at 800°C for 4 hours, and after grinding into a powder, 40 grams of polyvinyl alcohol with a purity of 99.998% was added to form a precursor powder;

[0041] Press the precursor powder into a disk with a diameter of 76.2mm and a thickness of 5mm, and sinter at 1300°C for 3 hours to obtain a K:ZnO disk, which is used as a target for magnetron sputtering;

[0042] Put the prepared K:ZnO target material and the single crystal sapphire substrate after cleaning the surface into the vacuum chamber of the radio frequency magnetron sputtering device respectively, the distance between the target material and the substrate is 6cm, and the The substrate is completely blocked, the vacuum chamber is evacuated, and the substrate is heated to 500°C at the same time;

[0043] When the vacuum degree in the vacuum chamber ...

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Abstract

The invention relates to a double-acceptor co-doping method for growing a p-(K-N):ZnO thin film. At present, a radio frequency-magnetron sputtering method is not used for growing the p-(K-N):ZnO thin film. The double-acceptor co-doping method comprises the following steps of: firstly carrying out ball milling and pre-sintering on potassium oxide powder and zinc oxide powder in a ball grinder, adding a binding agent for pressing formation, and sintering to prepare a zinc oxide target doped with potassium; then placing the target and a substrate into a vacuum chamber of a radio frequency-magnetron sputtering device, vacuumizing and heating the substrate, feeding a mixed gas of argon and nitric oxide into the vacuum chamber, opening a radio frequency power source after adjusting a sputteringair pressure, then growing the thin film after pre-sintering, closing the radio frequency power source, the argon and the nitric oxide after the thin film grows to the needed thickness, and feeding oxygen into carry out in-situ annealing. The double-acceptor co-doping method has the advantages of higher doping density and hole carrier concentration, controlled doping density as well as lower acceptor level; and the prepared p-type ZnO thin film has good electricity performance and better repeatability and stability.

Description

technical field [0001] The invention relates to an I-V group double acceptor co-doped growth p Type ZnO thin film method, specifically a double-acceptor co-doped growth p- (K-N): The method for ZnO thin film belongs to the technical field of semiconductor photoelectric thin film materials and devices. Background technique [0002] The research of short-wavelength optoelectronic materials and devices plays a very important role in improving the bandwidth of optical communication and the recording density of optical information. Zinc oxide (ZnO) has many excellent properties required for short-wavelength optoelectronic materials at room temperature, especially the exciton binding energy up to ~60meV, which makes it very promising in the field of ultraviolet / near-ultraviolet short-wavelength optoelectronics. while ZnO p The difficulty of type doping is one of the main bottlenecks affecting its wide application. As a II-VI compound semiconductor, ZnO p Type dopants are main...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 武军郑梁徐军明邵李焕郑鹏宋开新
Owner HANGZHOU DIANZI UNIV
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