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31results about How to "Doping concentration controllable" patented technology

Boron doped titanic oxide nano tube thin-film photoelectric electrode and preparing method thereof

The invention discloses a boron-doped titanium dioxide nanotube film photoelectrode which comprises a titanium sheet substrate and a boron-doped titanium dioxide nanotube film layer that grows in situ on the titanium sheet substrate, and the boron-doped concentration is 0.46at.percent to 1.42at.percent by atomic percent. A preparation method of the photoelectrode comprises the following steps: a titanium dioxide nanotube grows on the titanium sheet substrate through adopting an anode oxidation method; and the boron is then doped into the titanium dioxide nanotube layer through adopting a chemical vapor deposition method. Compared with the conventional titanium dioxide film, the titanium dioxide nanotube has larger specific surface area and stronger absorption capacity, thereby the photocatalysis performance and the photoelectric conversion efficiency of the titanium dioxide film electrode are greatly improved, the photoresponse of the film electrode is further improved through doping the nonmetal boron, more particularly the photoresponse range of materials is expanded. The invention can be applied in the fields of solar energy utilization, photoelectric conversion, photocatalysis, photoelectrocatalysis degradation of organic matters, and the like.
Owner:ZHEJIANG UNIV

Preparing method and application of red light materials based on ZnO doped with Co

A preparing method of red light materials based on ZnO doped with Co adopts ZnO with a wurtzite structure as a substrate, adopts transition metal element Co as doped ions and is prepared with a chemical co-precipitation method which includes the following steps: (1) mixing zinc sources and doping sources with solvents to obtain a mixing precursor solution; (2) mixing co-precipitator with solvents to obtain a precursor solution of the co-precipitator; (3) mixing the two precursor solutions, stirring with magnetic force and then leading the two precursor solutions to react under the heating condition; and (4) washing and drying precipitates obtained after separation respectively through deionized water and absolute ethyl alcohol. The preparing method and the application of the red light materials based on ZnO doped with Co have the advantages that the red light materials based on ZnO doped with Co has excellent optical characteristics, chemical stability, thermal stability, environment-friendly characteristics and other characteristics; the preparing method of the red light materials based on ZnO mixed with Co is simple in process, easy to implement, low in cost and suitable for scale production; and the red light materials are small in granules, easy to disperse, good in film-forming property and capable of being used as functional layer materials of electroluminescent devices.
Owner:TIANJIN UNIVERSITY OF TECHNOLOGY

Interdigital back contact heterojunction solar cell based on LPCVD high-efficiency amorphous silicon doping technology

The invention provides an interdigital back contact heterojunction solar cell based on an LPCVD high-efficiency amorphous silicon doping technology. The solar cell comprises a crystalline silicon substrate, and the front surface of the crystalline silicon substrate comprises at least one passivation layer; and the back surface of the crystalline silicon substrate comprises a tunneling oxide layer,n+ doped amorphous silicon layers / p+ doped amorphous silicon layers which are alternately arranged, a laser slotting region, a passivation layer and a metal electrode from inside to outside. A cell structure combining a back contact mode and a heterojunction mode is adopted, and a doped amorphous silicon growth mode is optimized, so the passivation capability and the contact capability of the solar cell are improved under the condition that the characteristic of IBC high short-circuit current is reserved, and the manufacturing cost is effectively reduced at the same time. Through verification, the conversion efficiency of the mass production HBC cell adopting the structure provided by the invention reaches 25% or above, and is higher than the mass production conversion efficiency of the current mainstream heterojunction or TOPCon technology of 23.5%, and the open-circuit voltage reaches 710 mV or more.
Owner:欧文凯

Preparation method and application of photocatalyst, copper calcium titanate containing high-density oxygen vacancy

The invention relates to a preparation method and application of a photocatalyst, copper calcium titanate containing high-density oxygen vacancy. The preparation method includes: utilizing a one-step molten salt method; controlling morphology and oxygen vacancy content by changing molten salt composition during synthesis; using metal oxide as a raw material; grinding and calcining the raw material to form a high-purity photocatalyst; calcining before washing the high-purity photocatalyst. The preparation method has the advantages of few raw material type, simple operation, adjustable molten salt composition, mild condition and simple process. A copper calcium titanate photocatalysis material obtained by the preparation method is high in yield, uniform in distribution and free of introduction of other mixed elements; by introducing oxygen vacancy, compositing of photo-induced electron hole pairs can be inhibited effectively, and the material is endowed with excellent visible light photocatalysis performance and is better than a commercial star photocatalysis material, titanium dioxide (P25). The defect that visible light cannot be used due to wide oxide band gap is overcome, and the defect that sulfide is unstable is made up due to the characteristic that the catalyst is of a diamond-like structure.
Owner:XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI

Preparation method of back-illuminated image sensor

The invention discloses a preparation method of a back-illuminated image sensor. The preparation method comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first side and a second side opposite to the first side; preparing a first epitaxial semiconductor layer and a second epitaxial semiconductor layer on the first side of the semiconductor substrate; forming first ion injection regions in the second epitaxial semiconductor layer in photodiode regions and forming first isolation structures in the second epitaxial semiconductor layer in isolation regions, wherein the first ion injection regions are arranged on the surface of the side deviating from the first epitaxial semiconductor layer; thinning the second side of the semiconductor substrate until the first epitaxial semiconductor layer is exposed; preparing second isolation structures in the exposed first epitaxial semiconductor layer. The preparation method of the back-illuminated image sensor can achieve the effects of improving the quantum efficiency (QE) of infrared light and also improving the QE of blue light.
Owner:OMNIVISION TECH (SHANGHAI) CO LTD

Preparation method of rare earth element co-doped nano titanium dioxide photocatalyst

The invention discloses a preparation method of a rare earth element co-doped nano titanium dioxide photocatalyst. The rare earth element is embedded into self-doped titanium dioxide to obtain the rare earth element co-doped nano titanium dioxide photocatalyst with certain morphology. The preparation method is simple and low at cost, and uses the photoelectric characteristics of rare earth element to prepare the titanium dioxide rare earth element co-doped nano titanium dioxide photocatalyst, which has the advantages of controllable doping, good dispersion, efficient energy storage and high catalytic activity. The purpose of the invention is to provide a simple and low-cost preparation method, which uses self-doped black TiO2 as the base and sets the rare earth element co-doping as customized purpose; and the method can prepare the rare earth element co-doped nano titanium dioxide photocatalyst with high catalytic activity.
Owner:吕浩然

Blocking impurity band detector manufacturing method based on SOI

The invention relates to a blocking impurity band detector manufacturing method based on an SOI. The method includes the steps that epitaxial is carried out on a top silicon layer made of SOI materials with an in-situ doping technology to grow an absorbing layer; heavy doping is carried out on the absorbing layer to grow a conducting layer; a high-resistance silicon wafer is bonded to the conducting layer; a bottom silicon layer of the SOI materials is removed with a deep silicon etching technology; a buried oxide layer of the SOI materials is removed with a wet etching technology; an electrode transition area is formed on the top silicon layer of the SOI materials with the ion implantation technology and the rapid thermal annealing technology; a micro-mesa is formed with a deep silicon etching technology, and a silicon nitride passivation layer is deposited; holes are formed in the silicon nitride passivation layer in an etched mode, and positive electrodes and negative electrodes are formed with an electron beam evaporation technology; electrode ohmic contact is formed with an annealing technology; the positive electrodes and the negative electrodes are thickened with an electron beam evaporation technology. According to the technical scheme, the quantum efficiency and the response ratio of a blocking impurity band detector are improved.
Owner:NO 50 RES INST OF CHINA ELECTRONICS TECH GRP

Method for preparing p-type zinc oxide film through K-H co-doping

The invention relates to a method for preparing a p-type zinc oxide film through K-H co-doping. At present, the preparation of a K-H co-doped p-ZnO film is not performed by using a pulse laser deposition method. The method provided by the invention comprises the following steps of: firstly, performing ball-mill mixing on potassium hydroxide powder, zinc oxide powder and a caking agent in a ball mill to obtain precursor powder; secondly, performing press forming on the precursor powder, and sintering the precursor powder to obtain a potassium hydroxide doped zinc oxide target material; thirdly, putting the target material and a substrate into a vacuum chamber of a pulse laser deposition device respectively, heating the substrate, introducing a mixed gas of argon and oxygen into the vacuum chamber, and starting a laser source in the pulse laser deposition device to shoot laser beams to the target material so as to grow a film; and finally, when the film grows to the required thickness, turning off the laser source, and performing in situ annealing under an oxygen protected atmosphere. According to the method provided by the invention, the doping concentration is high and is controllable at the same time, gap filling defects can be overcome, and the prepared p-type ZnO film has high electrical properties, repeatability and stability.
Owner:HANGZHOU DIANZI UNIV

Radio frequency horizontal double-diffusion-field effect transistor and manufacturing method thereof

The invention discloses a radio frequency horizontal double-diffusion-field effect transistor. An epitaxial layer is developed on a P type substrate. The structure of the epitaxial layer is a stepped structure of a P type light dope epitaxial layer, an N type light dope epitaxial layer, a P type heavy dope epitaxial layer, and an N type heavy dope epitaxial layer from bottom to top. Radio frequency lateral diffusion of metal-oxide-semiconductor (RFLDMOS) of the radio frequency horizontal double-diffusion-field effect transistor is provided with RDSON which is lower than RDSON of a normal RFLDMOS and larger BV and meanwhile provided with smaller output capacitance. Meantime, the radio frequency horizontal double-diffusion-field effect transistor adopts an epitaxial growth technology, the thickness, the conduction type, the dosage concentration and the like of the epitaxial layer are easy to control, and an ion implantation and a photoetching process in a drift region is reduced once.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Method for preparing three-dimensional optical waveguide and photonic device structure in transparent material

ActiveCN111474622AAchieving Broadband Guided WavesAchieve high quality preparationOptical waveguide light guideMiddle infraredEtching
The invention discloses a method for preparing a three-dimensional optical waveguide and a photonic device structure in a transparent material. The method comprises the steps of preparing a three-dimensional micro-channel in the transparent material based on the ultrafast laser selective wet etching, and then filling the micro-channel with a wave guide material, thereby forming the three-dimensional optical waveguide. Controllable preparation of various functional optical waveguide devices can be realized by manufacturing micro-channel structures with different spatial configurations. Comparedwith a traditional optical waveguide preparation method, the method has the following technical advantages that high-quality preparation of near-infrared and middle-infrared waveband waveguides, polarization-independent waveguides and active waveguide devices can be achieved by flexibly selecting filling materials, an optical waveguide mode field is flexible and controllable, and a small bendingradius can be achieved; and in combination with the three-dimensional characteristic of ultrafast laser processing, a complex three-dimensional photonic loop can be integrated on the chip in a high-density manner. Therefore, the method has important application value in the fields of optical communication networks, optical interconnection, astronomical photonics, micro-fluidic chips and the like.
Owner:EAST CHINA NORMAL UNIV

Preparation method of vanadium trioxide or doped vanadium trioxide nano powder

The invention discloses a preparation method of vanadium trioxide or doped vanadium trioxide nano powder. The preparation method comprises the following steps of: firstly, feeding vanadium trioxide powder or vanadium trioxide mixed powder doped with an oxide into a powder conveyer in a stirring state; secondly, feeding the vanadium trioxide powder or the vanadium trioxide mixed powder doped with the oxide into a plasma chamber in which the temperature of plasma arc is 2,000-2,500 DEG C in a reduction reaction atmosphere, by virtue of nitrogen at a velocity of 10-120g / min, and carrying out reduction reaction, wherein the reduction reaction atmosphere is a mixture gas of hydrogen and steam in a volume ratio of 1:(10-20), and the flow is 15-75L / min; subsequently, collecting a reduction reaction product from the plasma chamber by using a nano powder capturer, thus preparing the vanadium trioxide or the doped vanadium trioxide nano powder with a particle size of 20-100nm. The process is simple, raw materials are easily available, waste discharge is prevented, and the vanadium trioxide or the doped vanadium trioxide nano powder of high purity can be rapidly prepared in large scale with low cost.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI +1

Core-shell Mn:ZnO/Mn:ZnS diluted magnetic semiconductor heterogenous nano material and preparation method thereof

InactiveCN102774876AStable ferromagnetismAvoid addingMaterial nanotechnologyZinc oxides/hydroxidesSpintronicsCurie temperature
The invention discloses a core-shell Mn:ZnO / Mn:ZnS diluted magnetic semiconductor heterogenous nano material and a preparation method thereof, belonging to the cross field of spinning electronics and optoelectronics. The material uses Mn-doped ZnO diluted magnetic semiconductor nanorods as the core and Mn-doped ZnS nanoparticles as the shell. The preparation method comprises the following steps: preparing Mn-doped ZnO nanorods by a hydrothermal method; dispersing the Mn-doped ZnO nanorods in a thioacetamide solution; and carrying out sulfurization reaction in a water bath kettle, washing the reaction precipitate, and drying to obtain the diluted magnetic semiconductor heterogenous nano material. The material has ferromagnetic properties at room temperature, and the Curie temperature is higher than 300K; and the material has obvious ultraviolet and visible light luminescent properties, and thus, has important research meanings and favorable application prospects in the fields of spinning electronics and optoelectronics. The preparation method has the advantages of simple steps, simple experimental apparatus, mild reaction conditions and low preparation cost, can easily control the shell thickness and Mn doping amount, and is easy to operate.
Owner:BEIHANG UNIV

Planar continuous boron expanding method

The invention relates to a boron expanding technique for forming a PN junction, and particularly to a planar continuous expanding method. The method comprises the steps of mixing boron-containing oxide powder or boron-containing nitride powder or mixture of the boron-containing oxide powder and the boron-containing nitride powder with alcohol solution, thereby forming spraying solution; then spraying the formed spraying solution on the surface of a silicon wafer, and forming the PN junction through diffusion after high-temperature treatment. The planar continuous boron expanding method has advantages of no silicon chip pollution, low process temperature and controllable doping density. Furthermore used continuous processing equipment does not require a temperature increase process or a temperature reduction process and realizes continuous operation. The planar continuous boron expanding method settles the problems of high boron expansion temperature, low uniformity, and incapability of realizing continuous production. The planar continuous boron expanding method has relatively high practicability and belongs to updated technology.
Owner:BEIJING SOLARRAY TECHNOIOGY CO LTD +1

Method for preparing gallium-doped nano silicon particles by utilizing silicon waste

The invention discloses a method for preparing gallium-doped nano silicon particles by using silicon waste. The method comprises the following steps: selecting silicon micro-powder obtained by purifying the silicon waste after cutting a silicon ingot by a diamond wire as a raw material, preparing a gallium doping agent, mixing the doping agent with the silicon micro-powder, and carrying out ball milling; and pre-diffusing a gallium element to the surfaces of silicon particles through an instantaneous high temperature in a ball milling process, then carrying out vacuum drying on a product after ball milling, placing the dried product in a vacuum furnace, introducing a mixed gas of hydrogen and nitrogen for auxiliary diffusion, and screening and collecting after diffusion is completed to finally obtain the gallium-doped silicon nanoparticles. The gallium-doped silicon nanoparticles are simple in preparation process, low in production cost, suitable for a laser to carry out rapid and efficient local gallium element doping, high in process compatibility with an existing solar battery production line and suitable for industrial production. As the gallium-doped silicon nanoparticles have good conductivity, the gallium-doped silicon nanoparticles can well relieve the volume expansion of silicon and improve the rate capability of the battery as the silicon negative electrode material of the lithium battery.
Owner:YANCHENG INST OF TECH

PbS/SiO2 co-doped nano integrated tapered optical fiber amplifier and preparation method thereof

The invention relates to a PbS / SiO2 co-doped nano integrated conical optical fiber amplifier and a preparation method thereof, and belongs to the technical field of optical fiber technologies and nanomaterial preparation. The nano-integrated tapered optical fiber amplifier is composed of a tapered optical fiber and a PbS / SiO2 co-doped nano-film prepared on the surface of the optical fiber by using an atomic layer deposition technology, and an optical fiber amplification effect is realized through an evanescent wave principle. The nano-film is composed of PbS and SiO2 nano-materials which arealternately deposited, and the thickness of the film can reach the micron level. The SiO2 can effectively improve the surface defect structure of the PbS particles and improve the stability and dispersity, so that the luminous efficiency is improved, and the refractive index of the nano semiconductor film can be reduced. The prepared PbS / SiO2 co-doped nano film has the advantages of high dispersity, high doping concentration, low loss, high luminous efficiency, high stability and the like. The high-gain optical fiber amplifier is simple in structure, low in price and easy for industrial production.
Owner:SHANGHAI UNIV

Metal element doped lead sulfide material, preparation method thereof and application of metal element doped lead sulfide material in metal element doped lead sulfide film

The invention discloses a metal element doped lead sulfide material, a preparation method thereof and application of the metal element doped lead sulfide material in a metal element doped lead sulfide film. The chemical general formula of the metal element doped lead sulfide material is MxPb1-xS, wherein M is selected from at least one of VA group metal elements; 0.0001 < = x < = 0.01. The method comprises the steps that the film of the lead sulfide material is prepared through the chemical bath deposition method, the VA group metal elements are doped into the prepared film of the lead sulfide material through the aftertreatment method, the doping concentration is controllable, the preparation process is controllable, and the preparation method is simple. The prepared thin film has excellent uniformity and photosensitive characteristics, and can be used for preparing a near-infrared photoelectric detector.
Owner:HUAZHONG UNIV OF SCI & TECH

Method for preparing p-type zinc oxide film through K-H co-doping

The invention relates to a method for preparing a p-type zinc oxide film through K-H co-doping. At present, the preparation of a K-H co-doped p-ZnO film is not performed by using a pulse laser deposition method. The method provided by the invention comprises the following steps of: firstly, performing ball-mill mixing on potassium hydroxide powder, zinc oxide powder and a caking agent in a ball mill to obtain precursor powder; secondly, performing press forming on the precursor powder, and sintering the precursor powder to obtain a potassium hydroxide doped zinc oxide target material; thirdly, putting the target material and a substrate into a vacuum chamber of a pulse laser deposition device respectively, heating the substrate, introducing a mixed gas of argon and oxygen into the vacuum chamber, and starting a laser source in the pulse laser deposition device to shoot laser beams to the target material so as to grow a film; and finally, when the film grows to the required thickness, turning off the laser source, and performing in situ annealing under an oxygen protected atmosphere. According to the method provided by the invention, the doping concentration is high and is controllable at the same time, gap filling defects can be overcome, and the prepared p-type ZnO film has high electrical properties, repeatability and stability.
Owner:HANGZHOU DIANZI UNIV

Growth method for improving hole concentration of carbon-doped gallium indium arsenide

The invention provides a growth method for improving the hole concentration of carbon-doped gallium indium arsenide. The growth method comprises the following steps: S1, preparing a substrate; s2, growing a first epitaxial layer upwards, wherein the first epitaxial layer is a C-doped GaAs epitaxial layer or a non-doped InAs epitaxial layer; s3, a second epitaxial layer grows upwards, and when the first epitaxial layer is a C-doped GaAs epitaxial layer, the second epitaxial layer is a non-doped InAs epitaxial layer; when the first epitaxial layer is a non-doped InAs epitaxial layer, the second epitaxial layer is a C-doped GaAs epitaxial layer; and S4, repeating the step S2 and the step S3 until the preset thickness is reached. Due to the fact that C occupies the As position more easily in GaAs to provide a hole, C only needs to be doped in the GaAs epitaxial layer and not doped in the InAs epitaxial layer in the doping control process, C can be prevented from occupying the In position, and the hole activation rate is improved.
Owner:NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD

Visible light wave band quartz fluorescent optical fiber and preparation method thereof

The invention belongs to the technical field of optical fiber preparation, and particularly relates to a visible light wave band quartz fluorescent optical fiber and a preparation method thereof, and the rare earth ion doped visible light wave band (350-750 nm) quartz fluorescent optical fiber is prepared by combining improved chemical vapor deposition (MCVD) with a high-temperature doping process or combining external vapor deposition (OVD) with a solution soaking method. The quartz fluorescent optical fiber disclosed by the invention has the advantages of high refractive index difference, low loss, uniform rare earth ion doping, controllable doping concentration, wide fluorescence band, high fluorescence quantum yield, high optical fiber quartz purity, excellent mechanical property and the like, and can be widely applied to the fields of radiation detection, electric power sensing, biological monitoring, fluorescent illumination and the like.
Owner:SHANGHAI UNIV

Double-acceptor co-doping method for growing p-(K-N):ZnO thin film

The invention relates to a double-acceptor co-doping method for growing a p-(K-N):ZnO thin film. At present, a radio frequency-magnetron sputtering method is not used for growing the p-(K-N):ZnO thin film. The double-acceptor co-doping method comprises the following steps of: firstly carrying out ball milling and pre-sintering on potassium oxide powder and zinc oxide powder in a ball grinder, adding a binding agent for pressing formation, and sintering to prepare a zinc oxide target doped with potassium; then placing the target and a substrate into a vacuum chamber of a radio frequency-magnetron sputtering device, vacuumizing and heating the substrate, feeding a mixed gas of argon and nitric oxide into the vacuum chamber, opening a radio frequency power source after adjusting a sputtering air pressure, then growing the thin film after pre-sintering, closing the radio frequency power source, the argon and the nitric oxide after the thin film grows to the needed thickness, and feeding oxygen into carry out in-situ annealing. The double-acceptor co-doping method has the advantages of higher doping density and hole carrier concentration, controlled doping density as well as lower acceptor level; and the prepared p-type ZnO thin film has good electricity performance and better repeatability and stability.
Owner:HANGZHOU DIANZI UNIV

Optical fiber ring temperature performance improvement method based on graphene and optical fiber ring

The invention relates to a fiber-optic gyroscope, in particular to a graphene-based fiber-optic ring temperature performance improvement method and a fiber-optic ring, which are used for solving the problem that the heat conductivity coefficient of fiber-optic ring surrounding glue cannot be improved due to too high volume ratio of graphene. According to the graphene-based method for improving the temperature performance of the optical fiber ring, a graphene heat conduction film with a high heat conduction coefficient is adopted as a heat conduction layer to be added into the optical fiber ring, so that the heat conduction coefficient of the optical fiber ring is effectively improved, the temperature gradient between optical fiber layers is reduced, and the temperature performance of the optical fiber ring is improved; the operation is simpler and more convenient, and the thickness of the graphene heat-conducting film is easier to control. Meanwhile, the invention also provides a graphene-based optical fiber ring.
Owner:XIAN AEROSPACE PRECISION ELECTROMECHANICAL INST

A kind of preparation method of lateral graphene pin junction

The invention discloses a method for preparing a transverse grapheme PIN junction, and belongs to the field of semiconductor devices and thin film crystal growth. According to n-type or p-type bottom layer grapheme prepared on a substrate, the needed bottom layer grapheme is reserved through photoetching, a shielding layer is deposited on the bottom layer grapheme needing to serve as an original doping type area, the other doping type transferring grapheme is transferred to the surface of an obtained sample, then the photoetching and corrosion are carried out to remove the shielding layer and the transferring grapheme on the surface to form the transverse grapheme PIN junction. Controllable preparation of the transverse grapheme PIN junction is achieved through the photoetching technology and the transferring technology, and the gap of the PIN junction preparation technology is filled in. In the preparation method, doping concentration, layer thicknesses, sizes and the like of materials in the grapheme PIN junction are easy to control, and the technology used is simple and easy to achieve. The prepared transverse grapheme PIN junction can be applied to preparation of a grapheme photoelectric detector and other functional devices and improves performance of the devices.
Owner:THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

Core-shell Mn:ZnO/Mn:ZnS diluted magnetic semiconductor heterogenous nano material and preparation method thereof

InactiveCN102774876BStable ferromagnetismVisible UVMaterial nanotechnologyZinc oxides/hydroxidesWater bathsCurie temperature
The invention discloses a core-shell Mn:ZnO / Mn:ZnS diluted magnetic semiconductor heterogenous nano material and a preparation method thereof, belonging to the cross field of spinning electronics and optoelectronics. The material uses Mn-doped ZnO diluted magnetic semiconductor nanorods as the core and Mn-doped ZnS nanoparticles as the shell. The preparation method comprises the following steps: preparing Mn-doped ZnO nanorods by a hydrothermal method; dispersing the Mn-doped ZnO nanorods in a thioacetamide solution; and carrying out sulfurization reaction in a water bath kettle, washing the reaction precipitate, and drying to obtain the diluted magnetic semiconductor heterogenous nano material. The material has ferromagnetic properties at room temperature, and the Curie temperature is higher than 300K; and the material has obvious ultraviolet and visible light luminescent properties, and thus, has important research meanings and favorable application prospects in the fields of spinning electronics and optoelectronics. The preparation method has the advantages of simple steps, simple experimental apparatus, mild reaction conditions and low preparation cost, can easily control the shell thickness and Mn doping amount, and is easy to operate.
Owner:BEIHANG UNIV

Double-acceptor co-doping method for growing p-(K-N):ZnO thin film

The invention relates to a double-acceptor co-doping method for growing a p-(K-N):ZnO thin film. At present, a radio frequency-magnetron sputtering method is not used for growing the p-(K-N):ZnO thin film. The double-acceptor co-doping method comprises the following steps of: firstly carrying out ball milling and pre-sintering on potassium oxide powder and zinc oxide powder in a ball grinder, adding a binding agent for pressing formation, and sintering to prepare a zinc oxide target doped with potassium; then placing the target and a substrate into a vacuum chamber of a radio frequency-magnetron sputtering device, vacuumizing and heating the substrate, feeding a mixed gas of argon and nitric oxide into the vacuum chamber, opening a radio frequency power source after adjusting a sputteringair pressure, then growing the thin film after pre-sintering, closing the radio frequency power source, the argon and the nitric oxide after the thin film grows to the needed thickness, and feeding oxygen into carry out in-situ annealing. The double-acceptor co-doping method has the advantages of higher doping density and hole carrier concentration, controlled doping density as well as lower acceptor level; and the prepared p-type ZnO thin film has good electricity performance and better repeatability and stability.
Owner:HANGZHOU DIANZI UNIV

Fabrication method of impurity band detector based on soi blocking

The invention relates to a blocking impurity band detector manufacturing method based on an SOI. The method includes the steps that epitaxial is carried out on a top silicon layer made of SOI materials with an in-situ doping technology to grow an absorbing layer; heavy doping is carried out on the absorbing layer to grow a conducting layer; a high-resistance silicon wafer is bonded to the conducting layer; a bottom silicon layer of the SOI materials is removed with a deep silicon etching technology; a buried oxide layer of the SOI materials is removed with a wet etching technology; an electrode transition area is formed on the top silicon layer of the SOI materials with the ion implantation technology and the rapid thermal annealing technology; a micro-mesa is formed with a deep silicon etching technology, and a silicon nitride passivation layer is deposited; holes are formed in the silicon nitride passivation layer in an etched mode, and positive electrodes and negative electrodes are formed with an electron beam evaporation technology; electrode ohmic contact is formed with an annealing technology; the positive electrodes and the negative electrodes are thickened with an electron beam evaporation technology. According to the technical scheme, the quantum efficiency and the response ratio of a blocking impurity band detector are improved.
Owner:NO 50 RES INST OF CHINA ELECTRONICS TECH GRP
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