The invention relates to a method for preparing a p-type zinc oxide film through K-H co-doping. At present, the preparation of a K-H co-doped p-ZnO film is not performed by using a pulse laser deposition method. The method provided by the invention comprises the following steps of: firstly, performing ball-mill mixing on potassium hydroxide powder, zinc oxide powder and a caking agent in a ball mill to obtain precursor powder; secondly, performing press forming on the precursor powder, and sintering the precursor powder to obtain a potassium hydroxide doped zinc oxide target material; thirdly, putting the target material and a substrate into a vacuum chamber of a pulse laser deposition device respectively, heating the substrate, introducing a mixed gas of argon and oxygen into the vacuum chamber, and starting a laser source in the pulse laser deposition device to shoot laser beams to the target material so as to grow a film; and finally, when the film grows to the required thickness, turning off the laser source, and performing in situ annealing under an oxygen protected atmosphere. According to the method provided by the invention, the doping concentration is high and is controllable at the same time, gap filling defects can be overcome, and the prepared p-type ZnO film has high electrical properties, repeatability and stability.