Fabrication method of back-illuminated image sensor
An image sensor, back-illuminated technology, applied in the field of image sensors, can solve problems such as reducing the quantum efficiency of blue light, and achieve the effect of improving the quantum efficiency and making up for the limitations of the ion implantation process
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[0031] According to the above research, the present invention provides a method for preparing a back-illuminated image sensor, providing a method for preparing a back-illuminated image sensor, such as figure 1 shown, including the following steps:
[0032] Step S11, providing a semiconductor substrate, the semiconductor substrate has a first surface and a second surface opposite to the first surface, the semiconductor substrate includes a photodiode region and an isolation region;
[0033] Step S12, preparing a first epitaxial semiconductor layer on the first surface of the semiconductor substrate, the first epitaxial semiconductor layer being of a first doping type;
[0034] Step S13, preparing a second epitaxial semiconductor layer on the side of the first epitaxial semiconductor layer away from the semiconductor substrate;
[0035] Step S14, forming a first ion implantation region in the second epitaxial semiconductor layer on the photodiode region, forming a first isolati...
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