Fabrication method of impurity band detector based on soi blocking
A technology that blocks impurities and detectors. It is applied in semiconductor devices, final product manufacturing, and sustainable manufacturing/processing. It can solve the problems of limiting the quantum efficiency and responsivity of devices, the inability to effectively suppress dark current, and the introduction of impurities. Avoid the low resistivity of the barrier layer, solve the limited thickness of the absorbing layer, and suppress the effect of dark current
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[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0037] In the following description, specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the present invention is not limited to the specific embodiments disclosed below.
[0038] like figure 1 and figure 2 As shown, the preparation method based on the SOI barrier impurity band detector (hereinafter referred to as the detector) of the present invention is based on the existing mature SOI process technology, and obtains high resistivity through de...
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