Boron doped titanic oxide nano tube thin-film photoelectric electrode and preparing method thereof
A technology of titanium dioxide and nanotubes, which is applied in the field of boron-doped titanium dioxide nanotube thin film photoelectrodes and its preparation, can solve the problems of low photoelectric conversion efficiency, immobilization, and inability to use visible light, and achieve the improvement of photoelectric conversion efficiency. The effect of easy control of impurity concentration and high active specific surface area
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[0021] Example 1
[0022] Take NH 4 2.5 g of F, 5 g of oxalic acid, dissolved in 500 ml of water, adjusted to pH 3.7 to obtain electrolyte; using the treated titanium sheet as the anode, the cathode is a nickel plate, and anodic oxidation is carried out at 20V for 120 minutes. Obtain the amorphous titanium dioxide nanotube structure; then use chemical vapor deposition method to dope it with boron, where the precursor liquid is 50g / L H at a temperature of 50℃ 3 BO 3 Solution; Nitrogen as carrier gas, flow rate 0.015m / s; Deposition at 700℃ for 2 hours; After deposition, continue to pass nitrogen to remove residual precursors in the deposition chamber, and then calcinate at 700℃ for 1 hour under the protection of nitrogen, and cool naturally .
[0023] figure 2 (a) is a scanning electron micrograph of the surface and cross-section of the nanotube film. The length of the nanotube is about 1 micron and the diameter is about 50 nanometers. figure 2 (b) is the X-ray photoelectron spectr...
Example Embodiment
[0024] Example 2
[0025] Take NH 4 2.5 g of F, 5 g of oxalic acid, dissolved in 500 ml of water, adjusted to pH 4.9 to obtain electrolyte; using the treated titanium sheet as the anode and the cathode as the nickel plate, anodic oxidation was carried out at 15V for 30 minutes, Obtain the amorphous titanium dioxide nanotube structure; then use chemical vapor deposition method to dope it with boron, where the precursor liquid is 50g / L H at a temperature of 50℃ 3 BO 3 Solution; Nitrogen is the carrier gas, flow rate 0.002m / s; Deposition at 700℃ for 100 minutes, after the deposition, continue to pass nitrogen to remove the residual precursors in the deposition chamber, and then calcinate at 700℃ for 2 hours under the protection of nitrogen, and cool naturally .
[0026] The length of the nanotube is 323 nanometers, the diameter of the tube is 35 nanometers, and the boron doping concentration is 0.46at.%.
Example Embodiment
[0027] Example 3
[0028] Take NH 4 2.5 g of F, 5 g of oxalic acid, dissolved in 500 ml of water, adjusted the pH to 2.7 to obtain an electrolyte; the treated titanium sheet was used as the anode, and the cathode was a nickel plate. Anodically oxidized at a voltage of 25V for 100 minutes. Obtain the amorphous titanium dioxide nanotube structure; then use chemical vapor deposition method to dope it with boron, where the precursor liquid is 50g / L H at a temperature of 50℃ 3 BO 3 Solution, nitrogen as carrier gas, flow rate 0.02m / s; deposition at 700℃ for 150 minutes; after deposition, continue to pass nitrogen to remove the precursors remaining in the deposition chamber, and then calcinate at 700℃ for 3 hours under the protection of nitrogen, and cool naturally .
[0029] The length of the nanotube is 867 nanometers, the diameter of the tube is 75 nanometers, and the boron doping concentration is 1.42at.%.
[0030] The photoelectrode in the embodiment of the present invention was us...
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