PbS/SiO2 co-doped nano integrated tapered optical fiber amplifier and preparation method thereof

A tapered optical fiber and amplifier technology, applied in the field of optical fiber technology and nanomaterial preparation, can solve the problems of low luminous efficiency, high surface activity, single structure, etc., and achieve the effects of reducing refractive index, high dispersibility, and easy operation

Pending Publication Date: 2020-06-19
SHANGHAI UNIV
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Problems solved by technology

The structure of the nano-film is single, the surface activity of the material is high, unstable, easy to oxidize in the air, and the luminous efficiency is low; the refractive index of the PbS material is high, which is easy to cause a large loss; the thickness of the film is on the order of nanometers, and the evanescent wave acts on Thin film has less area and less gain

Method used

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  • PbS/SiO2 co-doped nano integrated tapered optical fiber amplifier and preparation method thereof
  • PbS/SiO2 co-doped nano integrated tapered optical fiber amplifier and preparation method thereof

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Embodiment 1

[0027] see figure 1 and figure 2 , a PbS / SiO 2 Co-doped nano-integrated tapered fiber amplifier, including tapered fiber 1 and nano-film 2, the fiber used in the tapered fiber 1 is a single-mode fiber with a core diameter of 9 μm and a fiber diameter of 125 μm, using fused tapered Machine drawn into a tapered optical fiber 1 . The nanofilm 2 is composed of PbS(2-1) and SiO 2 (2-2) Nanomaterials are alternately deposited. The atomic layer deposition technology is used to deposit sequentially on the surface-activated tapered optical fiber 1 . The gas-phase precursors of the Pb source used are: lead bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Bis(2,2,6,6-tetramethyl-3,5- heptanedionato)lead(II), Pb(TMHD) 2 ; The precursor material of S used is H 2 S and N 2 mixture. The gas-phase precursor of the Si source used is: diisopropylaminosilane (N,N-bis(1-methyl)silanamine); the oxygen source is ozone (O 3 ). Fluorescence spectral range of amplifying fiber: 1100 nm – 1700 n...

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Abstract

The invention relates to a PbS/SiO2 co-doped nano integrated conical optical fiber amplifier and a preparation method thereof, and belongs to the technical field of optical fiber technologies and nanomaterial preparation. The nano-integrated tapered optical fiber amplifier is composed of a tapered optical fiber and a PbS/SiO2 co-doped nano-film prepared on the surface of the optical fiber by using an atomic layer deposition technology, and an optical fiber amplification effect is realized through an evanescent wave principle. The nano-film is composed of PbS and SiO2 nano-materials which arealternately deposited, and the thickness of the film can reach the micron level. The SiO2 can effectively improve the surface defect structure of the PbS particles and improve the stability and dispersity, so that the luminous efficiency is improved, and the refractive index of the nano semiconductor film can be reduced. The prepared PbS/SiO2 co-doped nano film has the advantages of high dispersity, high doping concentration, low loss, high luminous efficiency, high stability and the like. The high-gain optical fiber amplifier is simple in structure, low in price and easy for industrial production.

Description

technical field [0001] The present invention relates to a kind of PbS / SiO 2 The co-doped nano-integrated tapered optical fiber amplifier and its preparation method belong to the field of optical fiber technology and nano material preparation technology. Background technique [0002] As the core component of optical fiber communication, optical fiber amplifier is of great significance to promote the development of optical communication field. At present, the combination of doped materials and optical fibers is mainly divided into two categories: doped core and cladding coating. Because of the characteristics of wide bandwidth, miniaturization, simple structure, and convenient preparation, evanescent wave fiber amplifiers based on coating nanomaterial thin films outside the cladding have become one of the research hotspots. Group IV-VI semiconductor nanomaterials represented by PbS have some unique physical and optical properties, such as highly symmetrical energy band struc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/39C03C25/465C03C25/42C03B37/025
CPCC03B37/025C03C25/42C03C25/465G02F1/39
Inventor 董艳华赵阳阳苏采芸王廷云文建湘黄怿张小贝商娅娜庞拂飞
Owner SHANGHAI UNIV
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